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NDTL01N60Z PDF даташит

Спецификация NDTL01N60Z изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв NDTL01N60Z
Описание N-Channel Power MOSFET / Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NDTL01N60Z Даташит, Описание, Даташиты
NDDL01N60Z, NDTL01N60Z
N-Channel Power MOSFET
600 V, 15 W
Features
100% Avalanche Tested
Gate Charge Minimized
Zener−protected
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Steady State, TC = 25°C (Note 1)
Continuous Drain Current
Steady State, TC = 100°C (Note 1)
Power Dissipation
Steady State, TC = 25°C
Pulsed Drain Current, tp = 10 ms
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy (ID = 0.8 A)
Peak Diode Recovery (Note 2)
VDSS
VGS
ID
ID
PD
IDM
IS
EAS
dv/dt
600
±30
0.8 0.25
V
V
A
0.5 0.15 A
26 2 W
3.4
2.5 1.7
12
A
A
mJ
4.5 V/ns
Lead Temperature for Soldering
Leads
TL 260 °C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt 100 A/ms, VDD BVDSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDDL1N60Z
Junction−to−Ambient (Note 4) NDDL1N60Z
(Note 3) NDDL1N60Z−1
(Note 4) NDTL1N60Z
(Note 5) NDTL1N60Z
RqJC
RqJA
4.8 °C/W
42 °C/W
96
62
151
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
15 W @ 10 V
N−Channel MOSFET
D (2, 4)
G (1)
S (3)
4
1 23
SOT−223
CASE 318E
STYLE 3
4
4
12
3
DPAK
CASE 369C
STYLE 2
1 23
IPAK
CASE 369D
STYLE 2
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 0
1
Publication Order Number:
NDDL01N60Z/D









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NDTL01N60Z Даташит, Описание, Даташиты
NDDL01N60Z, NDTL01N60Z
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 1 mA
Reference to 25°C, ID = 1 mA
600
610
V
mV/°C
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
IDSS
IGSS
VDS = 600 V, VGS = 0 V
VGS = ±20 V
TJ = 25°C
TJ = 125°C
1
50
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coef-
ficient
VGS(TH)
VGS(TH)/TJ
VDS = VGS, ID = 50 mA
3 4.0 4.5 V
9.6 mV/°C
Static Drain-to-Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCES
VGS = 10 V, ID = 0.4 A
VDS = 15 V, ID = 0.4 A
12.2 15
0.7
W
S
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance (Note 7)
Effective output capacitance, energy
related (Note 9)
Ciss
Coss
Crss
Co(er)
VDS = 25 V, VGS = 0 V, f = 1 MHz
VGS = 0 V, VDS = 0 to 480 V
92 pF
13
3
5.5 pF
Effective output capacitance, time
related (Note 10)
Co(tr)
ID = constant, VGS = 0 V,
VDS = 0 to 480 V
8.1
Total Gate Charge (Note 7)
Qg
4.9 nC
Gate-to-Source Charge (Note 7)
Gate-to-Drain Charge (Note 7)
Qgs
Qgd VDS = 300 V, ID = 0.4 A, VGS = 10 V
1.2
2.4
Plateau Voltage
VGP
5.8 V
Gate Resistance
Rg
6.6 W
SWITCHING CHARACTERISTICS (Note 8)
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDD = 300 V, ID = 0.4 A,
VGS = 10 V, RG = 0 W
10 ns
5
13
18
Diode Forward Voltage
VSD TJ = 25°C
IS = 0.4 A, VGS = 0 V
TJ = 100°C
0.8 1.2 V
0.7
Reverse Recovery Time
trr
183 ns
Charge Time
Discharge Time
ta VGS = 0 V, VDD = 30 V
tb IS = 1 A, di/dt = 100 A/ms
33
150
Reverse Recovery Charge
Qrr
255 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Width 300 ms, Duty Cycle 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
9. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
10. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
http://onsemi.com
2









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NDTL01N60Z Даташит, Описание, Даташиты
NDDL01N60Z, NDTL01N60Z
MARKING DIAGRAMS
4
Drain
4
Drain
1 23
Gate Drain Source
IPAK
2
1 Drain 3
Gate Source
DPAK
Drain
4
AYW
1N60ZG
G
12 3
Gate Drain Source
SOT−223
A = Assembly Location
Y = Year
W, WW = Work Week
L1N60Z, 1N60Z = Specific Device Codes
G or G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NDDL01N60Z−1G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDDL01N60ZT4G
DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
NDTL01N60ZT1G
SOT−223
(Pb-Free, Halogen-Free)
1000 / Tape & Reel
NDTL01N60ZT3G
SOT−223
(Pb-Free, Halogen-Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3










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Номер в каталогеОписаниеПроизводители
NDTL01N60ZN-Channel Power MOSFET / TransistorON Semiconductor
ON Semiconductor

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