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LF351 PDF даташит

Спецификация LF351 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «JFET Input Operational Amplifiers».

Детали детали

Номер произв LF351
Описание JFET Input Operational Amplifiers
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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LF351 Даташит, Описание, Даташиты
ON Semiconductort
JFET Input
Operational Amplifiers
These low cost JFET input operational amplifiers combine two
state–of–the–art analog technologies on a single monolithic integrated
circuit. Each internally compensated operational amplifier has well matched
high voltage JFET input devices for low input offset voltage. The JFET
technology provides wide bandwidths and fast slew rates with low input bias
currents, input offset currents, and supply currents.
These devices are available in single, dual and quad operational
amplifiers which are pin–compatible with the industry standard MC1741,
MC1458, and the MC3403/LM324 bipolar devices.
Input Offset Voltage of 5.0 mV Max (LF347B)
Low Input Bias Current: 50 pA
Low Input Noise Voltage: 16 nV/ǸHz
Wide Gain Bandwidth: 4.0 MHz
High Slew Rate: 13V/µs
Low Supply Current: 1.8 mA per Amplifier
High Input Impedance: 1012
High Common Mode and Supply Voltage Rejection Ratios: 100 dB
MAXIMUM RATINGS
Rating
Supply Voltage
Differential Input Voltage
Input Voltage Range (Note 1)
Output Short Circuit Duration (Note 2)
Power Dissipation at TA = +25°C
Derate above TA =+25°C
Operating Ambient Temperature Range
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCC
VEE
VID
VIDR
tSC
PD
1/θJA
TA
TJ
Tstg
Value
Unit
+18 V
–18
±30 V
±15 V
Continuous
900 mW
10 mW/°C
0 to +70
°C
115 °C
– 65 to
+150
°C
NOTES: 1. Unless otherwise specified, the absolute maximum negative input voltage is
limited to the negative power supply.
2. Any amplifier output can be shorted to ground indefinitely. However, if more than
one amplifier output is shorted simultaneously, maximum junction temperature
rating may be exceeded.
LF347, B
LF351
LF353
FAMILY OF JFET
OPERATIONAL AMPLIFIERS
8
1
8
1
N SUFFIX
PLASTIC PACKAGE
CASE 626
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
PIN CONNECTIONS
Offset Null 1
Invt Input 2
Noninvt Input 3
VEE 4
-
+
8 NC
7 VCC
6 Output
5 Offset Null
LF351
(Top View)
Output A 1
8 VCC
2 - 7 Output B
Inputs A
3 +A
-6
Inputs B
VEE 4
B+ 5
LF353
(Top View)
N SUFFIX
PLASTIC PACKAGE
CASE 646
14
1
PIN CONNECTIONS
Out 1 1
Inputs 1
2
3
VCC 4
Inputs 2
5
6
-
+
+
-
Out 2 7
1
2
14 Out 4
- 13
Inputs 4
4
12
+
11 VEE
+
10
3 -9
Inputs 3
8 Out 3
(Top View)
Device
ORDERING INFORMATION
Operating
Function Temperature Range
Package
LF351D
LF351N
Single
Single
SO–8
Plastic DIP
LF353D
LF353N
Dual
Dual
TA = 0° to +70°C
SO–8
Plastic DIP
LF347BN Quad
LF347N Quad
Plastic DIP
Plastic DIP
© Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
LF347/D









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LF351 Даташит, Описание, Даташиты
LF347, B LF351 LF353
ELECTRICAL CHARACTERISTICS (VCC = +15 VEE = –15 V, TA = 25°C, unless otherwise noted.)
LF347B
LF347, LF351, LF353
Characteristic
Symbol
Min
Typ
Max
Min
Typ Max
Unit
Input Offset Voltage (RS 10 k, VCM = 0)
TA = +25°C
0°C TA +70°C
VIO mV
– 1.0 5.0 – 5.0 10
– – 8.0 – – 13
Avg. Temperature Coefficient of Input Offset Voltage VIO/T
RS 10 k, 0°C TA +70°C
– 10 –
µV/°C
– 10 –
Input Offset Current (VCM = 0, Note 3)
TA = +25°C
0°C TA +70°C
IIO
25 100
25 100
pA
– – 4.0 – – 4.0 nA
Input Bias Current (VCM = 0, Note 3)
TA = +25°C
0°C TA +70°C
IIB
50 200
50 200
pA
– – 8.0 – – 8.0 nA
Input Resistance
ri
– 1012
– 1012
Common Mode Input Voltage Range
VICR ±11 +15 – ±11 +15 –
–12 –12
V
Large–Signal Voltage Gain (VO = ±10 V, RL = 2.0 k)
TA = +25°C
0°C TA +70°C
AVOL
50 100
25 –
V/mV
25 100
15 –
Output Voltage Swing (RL = 10 k)
VO ±12 ±14 – ±12 ±14 –
V
Common Mode Rejection (RS 10 k)
CMR
80 100
70 100
dB
Supply Voltage Rejection (RS 10 k)
PSRR
80 100
70 100
dB
Supply Current
LF347
LF351
LF353
ID mA
– 7.2 11 – 7.2 11
– – – – 1.8 3.4
– – – – 3.6 6.5
Short Circuit Current
Slew Rate (AV = +1)
Gain–Bandwidth Product
ISC
SR
BWp
– 25 –
– 13 –
– 4.0 –
– 25 – mA
– 13 – V/µs
– 4.0 – MHz
Equivalent Input Noise Voltage
(RS = 100 , f = 1000 Hz)
Equivalent Input Noise Current (f = 1000 Hz)
en
– 24 –
– 24 – nV/Hz
in
– 0.01 –
– 0.01 – pA/ Hz
Channel Separation (LF347, LF353)
1.0 Hz f 20 kHz (Input Referred)
– –120 –
– –120 –
dB
For Typical Characteristic Performance Curves, refer to MC34001, 34002, 34004 data sheet.
NOTE: 3. Input bias currents of JFET input op amps approximately double for every 10°C rise in junction temperature. To maintain junction temperatures as
close to ambient as is possible, pulse techniques are utilized during test.
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LF351 Даташит, Описание, Даташиты
LF347, B LF351 LF353
OUTLINE DIMENSIONS
NOTE 2
85
14
F
–A–
–B–
N SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
L
–T–
SEATING
PLANE
H
C
J
N
DK
M
G
0.13 (0.005) M T A M B M
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400
B 6.10 6.60 0.240 0.260
C 3.94 4.45 0.155 0.175
D 0.38 0.51 0.015 0.020
F 1.02 1.78 0.040 0.070
G 2.54 BSC
0.100 BSC
H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
K 2.92 3.43 0.115 0.135
L 7.62 BSC
0.300 BSC
M --- 10_ --- 10_
N 0.76 1.01 0.030 0.040
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
AD
8
E
1
5
H
4
0.25 M B M
Be
h X 45 _
q
CA
SEATING
PLANE
A1 B
0.10
0.25 M C B S A S
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
MILLIMETERS
DIM MIN MAX
A 1.35 1.75
A1 0.10 0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
h 0.25 0.50
L 0.40 1.25
q 0_ 7_
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