NTP22N06 PDF даташит
Спецификация NTP22N06 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTP22N06 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTP22N06, NTB22N06
Power MOSFET
22 Amps, 60 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 μs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
VDS = 60 Vdc, IL(pk) = 12 A, RG = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RθJC
RθJA
TL
Value
60
60
"20
"30
22
10
66
60
0.4
− 55
to
+175
72
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
http://onsemi.com
22 AMPERES
60 VOLTS
RDS(on) = 60 mΩ
N−Channel
D
G
4
S
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx22N06
LLYWW
1
Gate
3
Source
NTx22N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx22N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06
TO−220AB
50 Units/Rail
NTB22N06
D2PAK
50 Units/Rail
NTB22N06T4
D2PAK
800/Tape & Reel
Publication Order Number:
NTP22N06/D
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NTP22N06, NTB22N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−Resistance (Note 1)
(VGS = 10 Vdc, ID = 11 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 1)
(VGS = 10 Vdc, ID = 22 Adc)
(VGS = 10 Vdc, ID = 11 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 11 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 22 Adc,
VGS = 10 Vdc, RG = 9.1 Ω) (Note 1)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 48 Vdc, ID = 22 Adc,
VGS = 10 Vdc) (Note 1)
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 22 Adc, VGS = 0 Vdc) (Note 1)
(IS = 22 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Reverse Recovery Time
(IS = 22 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 1)
trr
ta
tb
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
QRR
Min Typ Max Unit
60 71
− 71
Vdc
−
− mV/°C
μAdc
− − 1.0
− − 10
−
−
±100
nAdc
2.0 3.09 4.0 Vdc
− 7.0 − mV/°C
mΩ
− 52 60
Vdc
− 1.2 1.6
− 1.11 −
− 12 − mhos
−
502 700
pF
− 160 225
− 46 65
− 12 25 ns
− 39 80
− 18 40
− 34 70
− 15.5 32 nC
− 3.4 −
− 7.7 −
− 1.07 1.15 Vdc
− 1.0 −
− 43 − ns
− 32 −
− 11 −
− 0.071 −
μC
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NTP22N06, NTB22N06
50
VGS = 10 V
40 9 V
30
20
10
8V
7.5 V
7V
6.5 V
6V
5.5 V
5V
0
012 3456 7
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
8
40
VDS ≥ 10 V
30
20
10 TJ = 25°C
TJ = 100°C
TJ = −55°C
0
2 34 5678 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
0.16
0.14
VGS = 10 V
0.12
0.10 TJ = 100°C
0.08 TJ = 25°C
0.06
0.04
0.02 TJ = −55°C
0 0 10 20 30 40
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.16
0.14
VGS = 15 V
0.12
0.10
0.08
0.06
TJ = 100°C
TJ = 25°C
0.04
0.02
TJ = −55°C
50 0 0
10 20 30 40 50
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8
ID = 11 A
VGS = 10 V
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4
100
1.2
1
TJ = 100°C
10
0.8
0.6
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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