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NTP22N06 PDF даташит

Спецификация NTP22N06 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTP22N06
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP22N06 Даташит, Описание, Даташиты
NTP22N06, NTB22N06
Power MOSFET
22 Amps, 60 Volts
NChannel TO220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
DraintoSource Voltage
DraintoGate Voltage (RGS = 10 MΩ)
GatetoSource Voltage
Continuous
NonRepetitive (tpv10 ms)
Drain Current
Continuous @ TA = 25°C
Continuous @ TA = 100°C
Single Pulse (tpv10 μs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
VDS = 60 Vdc, IL(pk) = 12 A, RG = 25 Ω)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RθJC
RθJA
TL
Value
60
60
"20
"30
22
10
66
60
0.4
55
to
+175
72
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
http://onsemi.com
22 AMPERES
60 VOLTS
RDS(on) = 60 mΩ
NChannel
D
G
4
S
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx22N06
LLYWW
1
Gate
3
Source
NTx22N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx22N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP22N06
TO220AB
50 Units/Rail
NTB22N06
D2PAK
50 Units/Rail
NTB22N06T4
D2PAK
800/Tape & Reel
Publication Order Number:
NTP22N06/D









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NTP22N06 Даташит, Описание, Даташиты
NTP22N06, NTB22N06
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static DraintoSource OnResistance (Note 1)
(VGS = 10 Vdc, ID = 11 Adc)
RDS(on)
Static DraintoSource OnVoltage (Note 1)
(VGS = 10 Vdc, ID = 22 Adc)
(VGS = 10 Vdc, ID = 11 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 11 Adc)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
(VDD = 30 Vdc, ID = 22 Adc,
VGS = 10 Vdc, RG = 9.1 Ω) (Note 1)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 48 Vdc, ID = 22 Adc,
VGS = 10 Vdc) (Note 1)
QT
Q1
Q2
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 22 Adc, VGS = 0 Vdc) (Note 1)
(IS = 22 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
Reverse Recovery Time
(IS = 22 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs) (Note 1)
trr
ta
tb
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperatures.
QRR
Min Typ Max Unit
60 71
71
Vdc
mV/°C
μAdc
− − 1.0
− − 10
±100
nAdc
2.0 3.09 4.0 Vdc
7.0 mV/°C
mΩ
52 60
Vdc
1.2 1.6
1.11
12 mhos
502 700
pF
160 225
46 65
12 25 ns
39 80
18 40
34 70
15.5 32 nC
3.4
7.7
1.07 1.15 Vdc
1.0
43 ns
32
11
0.071
μC
http://onsemi.com
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NTP22N06 Даташит, Описание, Даташиты
NTP22N06, NTB22N06
50
VGS = 10 V
40 9 V
30
20
10
8V
7.5 V
7V
6.5 V
6V
5.5 V
5V
0
012 3456 7
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
8
40
VDS 10 V
30
20
10 TJ = 25°C
TJ = 100°C
TJ = 55°C
0
2 34 5678 9
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
0.16
0.14
VGS = 10 V
0.12
0.10 TJ = 100°C
0.08 TJ = 25°C
0.06
0.04
0.02 TJ = 55°C
0 0 10 20 30 40
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus
GatetoSource Voltage
0.16
0.14
VGS = 15 V
0.12
0.10
0.08
0.06
TJ = 100°C
TJ = 25°C
0.04
0.02
TJ = 55°C
50 0 0
10 20 30 40 50
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
2
1.8
ID = 11 A
VGS = 10 V
1.6
10000
VGS = 0 V
1000
TJ = 150°C
1.4
100
1.2
1
TJ = 100°C
10
0.8
0.6
50 25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
175
1
0 10 20 30 40 50 60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
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