6HP04CH PDF даташит
Спецификация 6HP04CH изготовлена «ON Semiconductor» и имеет функцию, называемую «P-Channel Small Single MOSFET». |
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Детали детали
Номер произв | 6HP04CH |
Описание | P-Channel Small Single MOSFET |
Производители | ON Semiconductor |
логотип |
5 Pages
No Preview Available ! |
Ordering number : ENA1039A
6HP04CH
P-Channel Small Single MOSFET
–60V, –370mA, 4.2Ω, Single CPH3
http://onsemi.com
Features
• 4V drive
• Halogen free compliance
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--60
±20
--370
--1480
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--100μA
VDS=--10V, ID=--190mA
ID=--190mA, VGS=--10V
ID=--100mA, VGS=--4V
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--370mA
IS=--370mA, VGS=0V
min
--60
Ratings
typ
--1.2
310
3.1
5.1
24.1
8.5
4.1
18.4
15.2
113
41
0.84
0.19
0.21
--0.92
max
--1
±10
--2.6
4.2
7.3
--1.2
Unit
V
μA
μA
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014
May, 2014
50714 TKIM TC-00003062/20608PE TIIM TC-00001164 No.A1039-1/5
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6HP04CH
ID -- VDS
--400
--10.0V
--6.0V
--300 --4.5V
--4.0V
--200
--100
0
0
14
12
10
VGS= --3V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Drain to Source Voltage, VDS -- V IT17336
RDS(on) -- VGS
Ta=25°C
--190mA
8
6
4
ID= --100mA
2
--400
VDS= --10V
--350
ID -- VGS
--300
--250
--200
--150
--100
--50
0
0 --1 --2 --3 --4 --5
Gate to Source Voltage, VGS -- V IT17337
RDS(on) -- Ta
14
12
10
8
6
4
VGS= --4V, ID=
VGS= --10V, I
--100mA
D= --190mA
2
0
0
1000
7
5
3
2
100
7
5
3
2
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate to Source Voltage, VGS -- V
| yfs | -- ID
IT17338
VDS= --10V
Ta=
--25°C
75°C
25°C
10
7
5
3
2
1
--1
23
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
td(off)
tf
td(on)
tr
5 7 --10 2 3 5 7 --100 2 3
Drain Current, ID -- mA
SW Time -- ID
5 7--1000
IT17340
VDD= --30V
VGS= --10V
1
--0.1
23
5 7 --1
23
5 7 --10
Drain Current, ID -- A
IT17342
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT17339
--1000
7
5
IS -- VSD
VGS=0V
3
2
--100
7
5
3
2
--10
7
5
3
2
--1
0
100
7
5
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Diode Forward Voltage, VSD -- V IT17341
Ciss, Coss, Crss -- VDS
f=1MHz
3 Ciss
2
10 Coss
7
5 Crss
3
2
1
0 --5 --10 --15 --20 --25 --30
Drain to Source Voltage, VDS -- V IT17343
No.A1039-2/5
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6HP04CH
--10
VDS= --30V
--9
VGS -- Qg
--8
--7
--6
--5
--4
--3
--2
--1
0
0 0.2 0.4 0.6 0.8 1.0
Total Gate Charge, Qg -- nC
IT17344
PD -- Ta
0.8
When mounted on ceramic substrate
(900mm2✕0.8mm)
0.7
0.6
0.5
0.4
SOA
--10
7
5
3
2
IDP= --1480mA (PW≤10μs)
--1.0
7
5
ID= --370mA
3
2
--0.1
7
5
3
2
--0.01
Operation
in
this
DC
area
op1e0r0am1ti0osmn1sm1s00μs
is limited by RDS(on).
7
5
3
2
--0.001
--0.01 2 3
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2✕0.8mm)
5 7--0.1 2 3 5 7 --1 2 3 5 7--10 2 3
5 7--100
Drain to Source Voltage, VDS -- V IT17345
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT17346
No.A1039-3/5
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