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Datasheet NDBA180N10B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NDBA180N10B | Power MOSFET, Transistor NDBA180N10B
Power MOSFET 100V, 2.8mΩ, 180A, N-Channel
www.onsemi.com
Features
• Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 100% Avalanche Tested • Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbo |  ON Semiconductor | mosfet |
NDB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NDB171 | Transient Voltage Suppressor Diode NDB171
Transient Voltage Suppressor Diode
Bi-directional ESD Protection TVS Diode
General Description
The NDB171 device is help protect sensitive electronic equipment against electrostatic discharge (ESD). The NDB171 device is safely dissipate ESD strikes, exceeding the IEC 61000-4-2 International  AUK diode | | |
| 2 | NDB4050 | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo  Fairchild transistor | | |
| 3 | NDB4050L | N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1996
NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces Fairchild transistor | | |
| 4 | NDB4060 | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo Fairchild transistor | | |
| 5 | NDB4060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1996
NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces Fairchild transistor | | |
| 6 | NDB408A | N-Channel Enhancement Mode Field Effect Transistor May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol Fairchild transistor | | |
| 7 | NDB408AE | N-Channel Enhancement Mode Field Effect Transistor May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol Fairchild transistor | |
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