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NTLTD7900N PDF даташит

Спецификация NTLTD7900N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTLTD7900N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTLTD7900N Даташит, Описание, Даташиты
NTLTD7900N
Power MOSFET
8.5 A, 20 V, Logic Level, N−Channel
Micro8] Leadless
EZFETsare an advanced series of Power MOSFETs which
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 4000 V Human Body Model
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive − Can be Driven by Logic ICs
Micro8 Leadless Surface Mount Package − Saves Board Space
IDSS Specified at Elevated Temperature
Pb−Free Package is Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Steady
Rating
Symbol 10 Secs State
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
(tp v 600 ms)
VDSS
VGS
ID
IDM
20
±12
8.5 6.0
6.1 4.2
30
V
V
A
A
Continuous Source−Diode
Conduction (Note 1)
Is 2.9 1.4 A
Total Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
3.1 1.5
1.6 0.79
−55 to 150
W
°C
Thermal Resistance (Note 1)
Junction−to−Ambient
RqJA
40
82 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1x 1FR−4 board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
V(BR)DSS
20 V
RDS(on) TYP
20 mW @ 4.5 V
22 mW @ 2.5 V
ID MAX
8.5 A
DD
2.4 kW
G1
2.4 kW
G2
S1
N−Channel
N−Channel
S2
MARKING DIAGRAM
1
Micro8 Leadless
CASE 846C
1 790N
AYWW
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
Drain 8
Drain 7
Drain 6
Drain 5
Drain
1 Source 1
2 Gate 1
3 Source 2
4 Gate 2
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
1
Publication Order Number:
NTLTD7900N/D









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NTLTD7900N Даташит, Описание, Даташиты
NTLTD7900N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 85°C)
Gate−Body Leakage Current
(VGS = "4.5 Vdc, VDS = 0 Vdc)
(VGS = "12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 mAdc)
VGS(th)
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 4.5 Vdc, ID = 6.5 Adc)
(VGS = 2.5 Vdc, ID = 5.8 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 16 Vdc, VGS = 0 V,
f = 10 kHz)
SWITCHING CHARACTERISTICS (Note 3)
Ciss
Coss
Crss
Gate Charge
(VGS = 4.5 Vdc, ID = 6.5 Adc,
VDS = 10 Vdc)
(Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VGS = 4.5 Vdc, VDD = 10 Vdc,
ID = 1.0 Adc, RG = 9.1 W)
(Note 2)
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS
QT
Q1
Q2
td(on)
tr
td(off)
tf
Forward On−Voltage
(IS = 1.5 Adc, VGS = 0 Vdc)
IS = 1.5 Adc, VGS = 0 Vdc, TJ = 85°C)
(Note 2)
VSD
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
20
0.4
Typ
20
22
785
135
100
12.4
1.3
3.5
0.55
1.17
2.9
3.8
0.65
0.60
Max Unit
Vdc
mAdc
1.0
20
mAdc
1.0
500
Vdc
0.9
mW
26
31
− pF
16 nC
1.1 ms
2.2
5.8
7.7
1.0 Vdc
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NTLTD7900N Даташит, Описание, Даташиты
NTLTD7900N
TYPICAL ELECTRICAL CHARACTERISTICS
30
25
20
15
10
5
0
0
4.5 V
3.5 V
2.5 V
TJ = 25°C
VGS = 2 V
1.7 V
1.4 V
1.1 V
1234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
30
VDS 10 V
25
20
15
10
5
0
0
TJ = 125°C
TJ = 25°C
TJ = −55°C
12
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3
0.07
0.06
0.05
ID = 8.5 A
T = 25°C
0.04
TJ = 25°C
0.03
VGS = 2.5 V
0.04
0.03
0.02
0.02
0.01
VGS = 4.5 V
0.01
12 3 4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus Gate Voltage
0
05
10 15 20 25 30
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
ID = 8.5 A
VGS = 4.5 V
1.4
1.2
100000
VGS = 0 V
10000
TJ = 150°C
1
1000
TJ = 125°C
0.8
0.6
−50 −25 0
25 50 75 100 125 150
TJ, TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
0
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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