MTB55N06Z PDF даташит
Спецификация MTB55N06Z изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | MTB55N06Z |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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MTB55N06Z
Preferred Device
Power MOSFET
55 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This high energy device also
offers a drain−to−source diode with fast recovery time. Designed for
high voltage, high speed switching applications in power supplies,
PWM motor controls and other inductive loads, the avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor−Absorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Drain Current
− Continuous @ TC = 25°C
− Continuous @ TC = 100°C
− Single Pulse (tp ≤ 10 μs)
ID 55
ID 35.5
IDM 165
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD 113
0.91
2.5
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc,
VGS = 10 Vdc, Peak IL = 55 Apk,
L = 0.3 mH, RG = 25 Ω)
EAS
454 mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
RθJC
RθJC
RθJA
°C/W
1.1
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
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55 AMPERES
60 VOLTS
RDS(on) = 18 mΩ
N−Channel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB55N06Z
YWW
12
Gate Drain
3
Source
MTB55N06Z
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB55N06Z
MTB55N06ZT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MTB55N06Z/D
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MTB55N06Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 27.5 Adc)
(Cpk ≥ 2.0)
Drain−to−Source On−Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 4.0 Vdc, ID = 27.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 55 Adc,
VGS(on) = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 55 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60 −
− 53
Vdc
−
− mV/°C
μAdc
− − 1.0
− − 10
− − 100 nAdc
Vdc
2.0 3.0 4.0
− 6.0 − mV/°C
mΩ
− 14 18
Vdc
−
0.825
1.2
− 0.74 1.0
12 15
− Mhos
−
1390
1950
pF
− 520 730
− 119 238
− 27 54 ns
− 157 314
− 116 232
− 126 252
− 40 56 nC
− 7.0 −
− 18 −
− 15 −
Vdc
− 0.93 1.1
− 0.82 −
− 57 − ns
− 32 −
− 25 −
− 0.11 −
μC
nH
− 3.5 −
− 4.5 −
− 7.5 −
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MTB55N06Z
60
10 V 9.0 V
50 8.0 V
40 7.0 V
TJ = 25°C
6.0 V
30
20 5.0 V
10
VGS = 4.0 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS ≥ 10 V
50
40
30
100°C
20 25°C
10
TJ = −55°C
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
24
VGS = 10 V
20
TJ = 100°C
16
25°C
12
−55°C
8.0
10 20 30 40 50 60
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
15.0
TJ = 25°C
14.6
14.2 VGS = 10 V
13.8
15 V
13.4
13.0
10
20
30 40
50 60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6 ID = 15 A
1.4
1.2
1.0
0.8
1000
VGS = 0 V
100
10
1.0
0.1
125°C
100°C
TJ = 25°C
0.6 0.01
−50 −25 0 25 50 75 100 125 150
0 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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