MTB36N06V PDF даташит
Спецификация MTB36N06V изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | MTB36N06V |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
10 Pages
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MTB36N06V
Preferred Device
Power MOSFET
32 Amps, 60 Volts
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 50 μs)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 20
± 25
32
22.6
112
90
0.6
3.0
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 32 Apk, L = 0.1 mH, RG = 25 Ω)
EAS
205 mJ
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient (Note 1.)
RθJC
RθJA
RθJA
°C/W
1.67
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
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32 AMPERES
60 VOLTS
RDS(on) = 40 mΩ
N−Channel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB36N06V
YWW
12
Gate Drain
3
Source
MTB36N06V
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB36N06V
MTB36N06VT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MTB36N06V/D
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MTB36N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 16 Adc)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 32 Adc)
(VGS = 10 Vdc, ID = 16 Adc, TJ = 150°C)
Forward Transconductance (VDS = 7.6 Vdc, ID = 16 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 32 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 32 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 32 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60 −
− 61
− Vdc
− mV/°C
μAdc
− − 10
− − 100
− − 100 nAdc
2.0 2.6 4.0 Vdc
− 6.0 − mV/°C
− 0.034 0.04 Ohm
Vdc
− 1.25 1.54
− − 1.47
5.0 7.83
− mhos
−
1220
1700
pF
− 337 470
− 74.8 150
− 14 30 ns
− 138 270
− 54 100
− 91 180
− 39 50 nC
−7−
− 17 −
− 13 −
Vdc
− 1.03 2.0
− 0.94 −
− 92 − ns
− 64 −
− 28 −
− 0.332 −
μC
nH
− 3.5 −
nH
− 7.5 −
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MTB36N06V
TYPICAL ELECTRICAL CHARACTERISTICS
72
TJ = 25°C
54
36
9V
8V
VGS = 10 V
7V
6V
18 5 V
4V
0
01 2 34
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
72
VDS ≥ 10 V
54
TJ = 100°C
25°C
36
18
−55°C
0
12 3 4 5 67 8 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.1
VGS = 10 V
0.08
0.06
0.04
0.02
TJ = 100°C
25°C
− 55°C
0.052
TJ = 25°C
0.044
0.036
VGS = 10 V
15 V
0
0 18 36 54 72
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.028
0
18 36 54
ID, DRAIN CURRENT (AMPS)
72
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6 ID = 16 A
1.4
1.2
1
0.8
0.6
− 50 − 25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1000
VGS = 0 V
TJ = 125°C
100
100°C
10 25°C
1
0 10 20 30 40 50
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
60
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