FDD6688S PDF даташит
Спецификация FDD6688S изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «30V N-Channel PowerTrench SyncFET». |
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Детали детали
Номер произв | FDD6688S |
Описание | 30V N-Channel PowerTrench SyncFET |
Производители | Fairchild Semiconductor |
логотип |
8 Pages
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May 2004
FDD6688S
30V N-Channel PowerTrench SyncFET™
General Description
The FDD6688S is designed to replace a single TO-252
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6688S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor Drives
Features
• 88 A, 30 V.
RDS(ON) = 5.1 mΩ @ VGS = 10 V
RDS(ON) = 6.3 mΩ @ VGS = 4.5 V
• Low gate charge (31 nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
30
± 20
88
100
69
3.1
1.3
–55 to +150
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6688S
FDD6688S
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDD6688 Rev C (W)
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 1mA
ID = 15mA, Referenced to 25°C
VDS = 24 V,
VGS = ± 20 V,
VGS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 1mA
ID = 15mA, Referenced to 25°C
VGS = 10 V, ID = 18.5 A
VGS = 4.5 V, ID = 16.5 A
VGS = 10 V, ID = 18.5 A, TJ=125°C
VDS = 5 V,
ID = 18.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg Total Gate Charge at Vgs=5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDD = 15 V, ID = 18.5 A
Min Typ Max
501
21
30
30
500
± 100
1 1.4
–0.3
3
4.0 5.1
4.7 6.3
6.0 7.5
72
3290
900
300
1.6
13 23
13 23
31 50
64 103
58 81
31 44
8
10
Units
mJ
A
V
mV/°C
µA
nA
V
mV/°C
mΩ
S
pF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
nC
FDS6688S Rev C (W)
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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 4.4 A (Note 2)
Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge IF = 18.5 A, diF/dt = 300 A/µs
Irr Diode Reverse Recovery Current
400 700
28
30
2.1
mV
ns
nC
A
Notes:8
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDS6688S Rev C (W)
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Номер в каталоге | Описание | Производители |
FDD6688 | 30V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDD6688S | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |
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