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BU52061NVX PDF даташит

Спецификация BU52061NVX изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Omnipolar Detection Hall ICs».

Детали детали

Номер произв BU52061NVX
Описание Omnipolar Detection Hall ICs
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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BU52061NVX Даташит, Описание, Даташиты
Hall ICs
Omnipolar Detection Hall ICs
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
No.10045EGT02
Description
The omnipolar Hall ICs are magnetic switches that can operate both S-and N-pole, upon which the output goes from Hi to
Low. In addition to regular single-output Hall ICs, We offer a lineup of dual-output units with a reverse output terminal (active
High).
Features
1) Omnipolar detection
2) Micro power operation (small current using intermittent operation method)(BD7411G is excluded.)
3) Ultra-compact and thin wafer level CSP4 package (BU52054GWZ, BU52055GWZ)
4) Ultra-compact wafer level CSP4 package (BU52015GUL, BU52001GUL)
5) Ultra-Small outline package SSON004X1216 (BU52061NVX, BU52053NVX, BU52056NVX)
6) Ultra-Small outline package HVSOF5 (BU52011HFV, BU52021HFV)
7) Small outline package (BU52025G, BD7411G)
8) Line up of supply voltage
For 1.8V Power supply voltage (BU52054GWZ, BU52055GWZ, BU52015GUL, BU52061NVX, BU52053NVX,
BU52056NVX, BU52011HFV)
For 3.0V Power supply voltage (BU52001GUL)
For 3.3V Power supply voltage (BU52021HFV, BU52025G)
For 5.0V Power supply voltage (BD7411G)
9) Dual output type (BU52015GUL)
10) High ESD resistance 8kV (HBM) (6kV for BU52056NVX)
Applications
Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc.
Lineup matrix
Product name
BU52054GWZ
Supply
voltage
(V)
1.653.60
Operate
point
(mT)
+/-6.3
Hysteresis
(mT)
0.9
Period
(ms)
50
Supply current
(AVG)
(A)
5.0µ
Output
type
CMOS
Package
UCSP35L1
BU52055GWZ 1.653.60 +/-4.1
0.8
50
5.0µ
CMOS
UCSP35L1
BU52015GUL 1.653.30 +/-3.0
0.9
50
5.0µ
CMOS
VCSP50L1
BU52001GUL 2.403.30 +/-3.7
0.8
50
8.0µ
CMOS
VCSP50L1
BU52061NVX 1.653.60 +/-3.3
0.9
50
4.0µ
CMOS SSON004X1216
BU52053NVX 1.653.60 +/-3.0
0.9
50
5.0µ
CMOS SSON004X1216
BU52056NVX 1.653.60 +/-4.6
0.8
50
5.0µ
CMOS SSON004X1216
BU52011HFV 1.653.30 +/-3.0
0.9
50
5.0µ
CMOS
HVSOF5
BU52021HFV 2.403.60 +/-3.7
0.8
50
8.0µ
CMOS
HVSOF5
BU52025G
2.403.60 +/-3.7
0.8
50
8.0µ
CMOS
SSOP5
BD7411G
4.505.50 +/-3.4
Plus is expressed on the S-pole; minus on the N-pole
0.4
-
2.0m
CMOS
SSOP5
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/31
2011.12 - Rev.G









No Preview Available !

BU52061NVX Даташит, Описание, Даташиты
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
Technical Note
Absolute maximum ratings
BU52054GWZ, BU52055GWZ (Ta=25)
Parameter
Symbol
Ratings
Power Supply Voltage VDD -0.1+4.51
Unit
V
BU52015GUL (Ta=25)
Parameter
Symbol
Power Supply Voltage
VDD
Ratings Unit
-0.1+4.53 V
Output Current
IOUT
±0.5
mA
Power Dissipation
Pd
1002
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
1. Not to exceed Pd
2. Reduced by 1.00mW for each increase in Ta of 1over 25
(mounted on 24mm×20mm Glass-epoxy PCB)
Output Current
IOUT
±0.5
mA
Power Dissipation
Pd
4204
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
3. Not to exceed Pd
4. Reduced by 4.20mW for each increase in Ta of 1over 25
(mounted on 50mm×58mm Glass-epoxy PCB)
BU52001GUL (Ta=25)
BU52061NVX, BU52053NVX, BU52056NVX(Ta=25)
Parameter
Symbol
Ratings Unit
Power Supply Voltage VDD -0.1+4.55 V
Output Current
IOUT ±1 mA
Power Dissipation
Pd
4206
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
5. Not to exceed Pd
6. Reduced by 4.20mW for each increase in Ta of 1over 25
(mounted on 50mm×58mm Glass-epoxy PCB)
Parameter
Symbol
Ratings Unit
Power Supply Voltage VDD -0.1+4.57 V
Output Current
IOUT
±0.5
mA
Power Dissipation
Pd
20498
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
7. Not to exceed Pd
8. Reduced by 4.20mW for each increase in Ta of 1over 25
(mounted on 50mm×58mm Glass-epoxy PCB)
BU52011HFV (Ta=25)
Parameter
Symbol
Power Supply Voltage
VDD
Ratings Unit
-0.1+4.59 V
BU52021HFV (Ta=25)
Parameter
Symbol
Power Supply Voltage
VDD
Ratings Unit
-0.1+4.511 V
Output Current
IOUT
±0.5
mA
Power Dissipation
Pd
53610
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
9. Not to exceed Pd
10. Reduced by5.36mW for each increase in Ta of 1over 25
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
Output Current
IOUT ±1 mA
Power Dissipation
Pd
53612
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
11 Not to exceed Pd
12. Reduced by 5.36mW for each increase in Ta of 1over 25
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
BU52025G (Ta=25)
Parameter
Symbol
Ratings Unit
Power Supply Voltage
VDD -0.1+4.513 V
Output Current
IOUT ±1 mA
Power Dissipation
Pd
54014
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -40+125
13. Not to exceed Pd
14. Reduced by 5.40mW for each increase in Ta of 1over 25
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
BD7411G (Ta=25)
Parameter
Symbol
Ratings Unit
Power Supply Voltage
VDD -0.3+7.015 V
Output Current
IOUT ±1 mA
Power Dissipation
Pd
54016
mW
Operating
Temperature Range
Topr -40+85
Storage
Temperature Range
Tstg -55+150
15. Not to exceed Pd
16. Reduced by 5.40mW for each increase in Ta of 1over 25
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/31
2011.12 - Rev.G









No Preview Available !

BU52061NVX Даташит, Описание, Даташиты
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52053NVX,
BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
Technical Note
Magnetic, Electrical characteristics
BU52054GWZ (Unless otherwise specified, VDD=1.80V, Ta=25)
Parameter
Limits
Symbol
Min. Typ.
Max.
Unit
Power Supply Voltage
VDD 1.65 1.80 3.60 V
Operate Point
Release Point
Hysteresis
BopS
BopN
BrpS
BrpN
BhysS
BhysN
- 6.3 7.9
mT
-7.9 -6.3
-
3.5 5.4
-
mT
- -5.4 -3.5
- 0.9 -
mT
- 0.9 -
Period
Tp - 50 100 ms
Conditions
Output High Voltage
Output Low Voltage
VOH VDD-0.2 -
VOL - -
-
V
BrpN<B<BrpS
IOUT =-0.5mA
0.2
V
B<BopN, BopS<B
IOUT =+0.5mA
17
17
Supply Current
IDD(AVG)
-
5
8 µA Average
Supply Current During Startup Time
IDD(EN)
-
2.8
- mA During Startup Time Value
Supply Current During Standby Time
IDD(DIS)
-
1.8
- µA During Standby Time Value
17 B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (TP) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/31
2011.12 - Rev.G










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Номер в каталогеОписаниеПроизводители
BU52061NVXOmnipolar Detection Hall ICsROHM Semiconductor
ROHM Semiconductor

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