DataSheet26.com

2N683 PDF даташит

Спецификация 2N683 изготовлена ​​​​«Microsemi» и имеет функцию, называемую «Power Triode Thyristors».

Детали детали

Номер произв 2N683
Описание Power Triode Thyristors
Производители Microsemi
логотип Microsemi логотип 

6 Pages
scroll

No Preview Available !

2N683 Даташит, Описание, Даташиты
2N682, 2N683, and 2N685 – 2N692
Available on
commercial
versions
PNPN Silicon, Reverse-Blocking,
Power Triode Thyristors
Qualified per MIL-PRF-19500/108
DESCRIPTION
This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability
applications.
Qualified Levels:
JAN and JANTX
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N682, 2N683, 2N685, and 2N687 – 2N692.
JAN and JANTX qualifications are available per MIL-PRF-19500/108.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
A general purpose, reverse-blocking thyristor.
TO-208 / TO-48
Package
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Gate Voltage (Peak Total Value)
Maximum Average DC Output Current (1)
Non-repetitive Peak On-State Current (2) @ t = 7 ms
Symbol
TJ
T STG
V GM
IO
I TSM
Value
-65 to +125
-65 to +150
5
16
150
Unit
oC
oC
V(pk)
A
A
Notes:
1. This average forward current is for a maximum case temperature of +65 °C, and 180 electrical degrees
of conduction.
2. Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge
current must not exceed 100 amperes during the first 10 μs after switching from the off (blocking) state
to the on (conducting) state. This time is measured from the point where the thyristor voltage has
decayed to 90 percent of its initial blocking value.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 1 of 6









No Preview Available !

2N683 Даташит, Описание, Даташиты
2N682, 2N683, and 2N685 – 2N692
MECHANICAL and PACKAGING
CASE: Nickel plated copper.
TERMINALS: Nickel plated steel, solder dipped or RoHS compliant matte-tin plating (on commercial and CDS grade only).
MARKING: Manufacturer’s ID, part number, date code, polarity.
POLARITY: Terminal 1: gate, terminal 2: cathode, terminal 3 (stud): anode.
WEIGHT: Approximately 12.36 grams.
See Package Dimensions on last page.
Reliability Level
JAN = Jan level
JANTX = JANTX level
CDS (reference JANS)
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N682
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
C
di/dt
dv/dt
f
IF
IT
I TM
R
Re
RL
t
tp
V AA
SYMBOLS & DEFINITIONS
Definition
Capacitance
Critical rate of rise of on-state current
Critical rate of rise of off-state voltage
frequency
Forward current
On-state current
On-state current (peak total value)
Resistance
Responsivity, radiant
Resistor load
time
Pulse variation
Anode power supply voltage (dc)
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 2 of 6









No Preview Available !

2N683 Даташит, Описание, Даташиты
2N682, 2N683, and 2N685 – 2N692
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Repetitive Peak Reverse Voltage
and
Repetitive Peak Off-State Voltage
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
(1) Values applicable to zero or negative gate voltage (VGM).
Symbol
V RRM (1)
and
V DRM
Min.
Max.
50
100
200
250
300
400
500
600
700
800
Unit
V (pk)
Parameters / Test Conditions
Holding current:
Bias condition D; VAA = 24 V maximum;
ITM = IF1 = 1 A
IT = IF2 = 100 mA
trigger voltage source = 10 V
trigger PW = 100 μs (minimum)
R2 = 20 Ω
Reverse blocking current
AC method, bias condition D;
f = 60 Hz, VRRM = rated
Forward blocking current
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage and current
V2 = VD = 6 V; RL = 50 Ω;
Re = 20 Ω maximum
Forward on voltage
ITM = 50 A(pk) (pulse);
pulse width = 8.5 ms; maximum;
duty cycle = 2 percent maximum
Reverse gate current
VG = 5 V
Symbol Min.
Max.
Unit
IH 50 mA
I RRM1
I DRM1
V GT1
I GT1
V TM
IG
2 mA (pk)
2 mA (pk)
3V
35 mA
2 V (pk)
250 mA
T4-LDS-0249, Rev. 2 (4/25/13)
©2013 Microsemi Corporation
Page 3 of 6










Скачать PDF:

[ 2N683.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2N6800N-CHANNEL POWER MOSFETSeme LAB
Seme LAB
2N6802Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39New Jersey Semiconductor
New Jersey Semiconductor
2N6804TRANSISTORSInternational Rectifier
International Rectifier
2N68125 and 35 Amp RMS SCRsKnox Semiconductor  Inc
Knox Semiconductor Inc

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск