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QM3005P PDF даташит

Спецификация QM3005P изготовлена ​​​​«UBIQ» и имеет функцию, называемую «P-Ch 30V Fast Switching MOSFETs».

Детали детали

Номер произв QM3005P
Описание P-Ch 30V Fast Switching MOSFETs
Производители UBIQ
логотип UBIQ логотип 

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QM3005P Даташит, Описание, Даташиты
QM3005P
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3005P is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3005P meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
14m
ID
-60A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO220 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
GDS
Rating
-30
±20
-60
-38
-10
-8
-150
273
-50
74
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
Typ.
---
---
Max.
62
1.68
Unit
/W
/W
Rev A.02 D071511









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QM3005P Даташит, Описание, Даташиты
QM3005P
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-30A
VGS=-4.5V , ID=-15A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-5V , ID=-30A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-15A
VDD=-15V , VGS=-10V , RG=3.3Ω
ID=-15A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ. Max.
--- ---
-0.0232 ---
11.5 14
17.5 22
-1.5 -2.5
4.6 ---
--- -1
--- -5
--- ±100
30 ---
9 18
22 30.8
8.7 12.2
7.2 10.1
8 16
73.7 133
61.8 124
24.4 48.8
2215 3101
310 434
237 332
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=-25V , L=0.1mH , IAS=-24A
Min.
63
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-15A , dI/dt=100A/µs ,
TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
19
9
Max.
-60
-150
-1
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
V
nS
nC
2









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QM3005P Даташит, Описание, Даташиты
Typical Characteristics
150
125 VGS=-10V
100 VGS=-7V
75
VGS=-5V
50 VGS=-4.5V
VGS=-3V
25
0
0 0.5 -VDS1 , Dr1a.i5n-to-S2ource2.V5 oltag3e (V)3.5 4
Fig.1 Typical Output Characteristics
12
8
TJ=150
TJ=25
4
0
0.00 0.25 0.50 0.75
-VSD , Source-to-Drain Voltage (V)
1.00
Fig.3 Forward Characteristics of Reverse
1.5
QM3005P
P-Ch 30V Fast Switching MOSFETs
Fig.2 On-Resistance vs. G-S Voltage
10
VDS=-15V
8 ID=-15A
6
4
2
0
0 9 18 27 36
QG , Total Gate Charge (nC)
Fig.4 Gate-charge Characteristics
2.0
45
1 1.5
0.5 1.0
0
-50 TJ ,Ju0nction Temp50erature ()100
Fig.5 Normalized VGS(th) vs. TJ
150
0.5
-50
0 50 100
TJ , Junction Temperature ()
Fig.6 Normalized RDSON vs. TJ
3
150










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