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IN25AA160N PDF даташит

Спецификация IN25AA160N изготовлена ​​​​«Integral» и имеет функцию, называемую «NONVOLATILE ELECTRICALLY ERASABLE PROM».

Детали детали

Номер произв IN25AA160N
Описание NONVOLATILE ELECTRICALLY ERASABLE PROM
Производители Integral
логотип Integral логотип 

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IN25AA160N Даташит, Описание, Даташиты
IN25АА080N, IN25АА080D, IN25АА160N, IN25АА160D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL
PERIPHERAL INTERFACE (SPI).
functionally compartible to 25AA080, 25AA160 (Microchip)
DESCRIPTION
The IN25АА080N/D are a 8K(1Kx8) serial Electrically Erasable PROM with SPI interface.
*The IN25АА160N/D are a 16K (2Kx8) serial Electrically Erasable PROM with SPI interface (SPI).
The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs
are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF:
for IN25АА080N, IN25АА080D
for IN25АА160N, IN25АА160D
8192 bit,
16384 bit;
- Maximum clock frequency, fC:
for 4,5 V UCC 5,5 V
for 2,5 V UCC 5,5 V
for 1,8 V UCC 5,5 V
- Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC
for UCC = 2,5 V, UIL = 0 V, UIH = UCC
- Maximum read current, IOCCR :
3 MHz;
2 MHz;
1 MHz;
5,0 uA
1,0 uA;
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles;
- Build-in write protection block
- Write protection for 1/4, 1/2, or all of storage array;
- Power on/off data protection circuitry;
- Supply voltage UCC 1,8 … 5,5 V;
- Operating temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX
DIP
8
1 D SUFFIX
8 SOIC
1
Pin
Name
CS
SO
WP
GND
SI
SCK
HOLD
VCC
Function
Chip Select
Serial Data Output
Write protection
Ground
Serial Data Input
Clock Input
Hold input *
Power Supply
PIN FUNCTIONS
CS 01
SO 02
WP 03
GND 04
08 Vcc
07 HOLD
06 SCK
05 SI
Ver.00/13.10.2008
IN25AA080(160)-TSe
1 2263040









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IN25AA160N Даташит, Описание, Даташиты
IN25АА080N, IN25АА080D, IN25АА160N, IN25АА160D
Block Diagram
Status
counter
HV-generator
I/O
Control
logic
Memory
control logic
EEPROM Array
SI
SO
CS
SCK
HOLD
WP
Page latches
Decoder Y
Sense amplifier,
Read/Write control
UCC
GND
Recommended Operation Conditions & Maximum Ratings*
Parameter, unit
Supply voltage,V
High level input 2,7 V Ucc 5,5 V
voltage, V
1,8 V Ucc < 2,7 V
Low level input 2,7 V Ucc 5,5 V
voltage, V
1,8 V Ucc < 2,7 V
Ambient temperature
Symbol
Ucc
Recommended
Operation Conditions
Min Max
1,8 5,5
2,0 Ucc + 1,0
UIH 0,7Ucc Ucc + 1,0
UIL -0,3 0,8
-0,3 0,3UCC
TA -40 85
Maximum Ratings
Min Max
-0,6 7,0
– Ucc + 1,0
- 0,6
-60
-
150
ESD protection 2000 V.
Input capacity СI, output capacity СО have to be not more than 7pF for UCC = 5,0 V & TA=
(25±10) °С.
Ver.00/13.10.2008
IN25AA080(160)-TSe
2 2263040









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IN25AA160N Даташит, Описание, Даташиты
IN25АА080N, IN25АА080D, IN25АА160N, IN25АА160D
Electric Parameters ( -40oCTA85oC
Parameter, unit
Symbol
Mode
Low level output voltage, V
High level output voltage, V
Low level input leakage current, uA
UOL 2,5 V UCC 5,5 V
IOL = 2,1 mA
1,8 V UCC 2,5 V
IOL = 1,0 mA
UOH UCC = 1,8 V
IOH = -400 uA
UCC = 5,5 V
IOH = -400 uA
IILL UI = 0 V
High level input leakage current, uA IILH UI = 5,5V
Low level output leakage current,
uA
IOLL UI = 0 V
High level output leakage current,
uA
IOLH UI = 5,5V
Consumption current, uA
Consumption current (Operating
Read), uA
ICC
IOCC R
Ucc = 5,5 V, UIL = 0 V
UIH = Ucc
Ucc = 2,5 V, UIL = 0 V
UIH = Ucc
Ucc = 5,5 V, fC = 3 MHz
SO pin is not loaded
Ucc = 2,5 V, fC = 2 MHz
SO pin is not loaded
Consumption current (Operating
Write), uA
IOCC W
Ucc = 5,5 V, fC = 3 MHz
Ucc = 2,5 V, fC = 2 MHz
Data access time on SCK tran-
sition to low level, ns
tV
4,5 V UCC 5,5 V,
fC 3 MHz
2,5 V UCC < 4,5 V,
fC 2 MHz
1,8 V UCC < 2,5 V,
fC 1 MHz
4,5 V UCC 5,5 V,
fC 3 MHz
Output disable time on CS
high, ns
tDIS
2,5 V UCC < 4,5 V,
fC 2 MHz
1,8 V UCC < 2,5 V,
fC 1 MHz
4,5 V UCC 5,5 V,
fC 3 MHz
Output disable time on HOLD
low, ns
tHZ
2,5 V UCC < 4,5 V,
fC 2 MHz
1,8 V UCC < 2,5 V,
fC 1 MHz
4,5 V UCC 5,5 V,
fC 3 MHz
Output enable time on HOLD
high, ns
tHV
2,5 V UCC < 4,5 V,
fC 2 MHz
Write/Erase cycle, ms
Program/erase cycles
tCY
NE/W
1,8 V UCC < 2,5 V,
fC 1 MHz
UCC = 4,5 V, fC = 3 MHz
Ucc = 5,0 V
Min
-
1,3
5,0
-
-
-
-
-
-
-
-
100
150
200
100
150
200
1000000
Max
0,4
0,2
-10,0
10,0
-10,0
10,0
5,0
1,0
1,0
0,5
5,0
3,0
150
230
475
200
250
500
-
-
-
-
-
-
5
TA, °С
25 ± 10;
-45; 85
25±10
–40
85
Ver.00/13.10.2008
IN25AA080(160)-TSe
3 2263040










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Номер в каталогеОписаниеПроизводители
IN25AA160DNONVOLATILE ELECTRICALLY ERASABLE PROMIntegral
Integral
IN25AA160NNONVOLATILE ELECTRICALLY ERASABLE PROMIntegral
Integral

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