IRF7307QPBF PDF даташит
Спецификация IRF7307QPBF изготовлена «International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
|
Детали детали
Номер произв | IRF7307QPBF |
Описание | Power MOSFET ( Transistor ) |
Производители | International Rectifier |
логотип |
11 Pages
No Preview Available ! |
IRF7307QPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
l Surface Mount
G1 2
7 D1
l Available in Tape & Reel
l 150°C Operating Temperature
S2 3
6 D2
VDSS
20V
-20V
l Lead-Free
G2 4
5 D2
P-CHANNEL MOSFET
Description
Top View
RDS(on) 0.050Ω 0.090Ω
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability
making it ideal in a variety of power applications. This
SO-8
dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Base Part Number
IRF7307QPbF
IRF7307QPbF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7307QPbF
IRF7307QTRPbF
EOL Notice
EOL 529
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
Max.
N-Channel
P-Channel
5.7
5.2
4.1
21
2.0
0.016
± 12
5.0
-55 to + 150
-4.7
-4.3
-3.4
-17
-5.0
Units
A
W
W/°C
V
V/ns
°C
Typ.
Max.
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
September 3, 2014
No Preview Available ! |
IRF7307QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20
P-Ch -20
V
N-Ch
P-Ch
0.044
-0.012
V/°C
N-Ch
P-Ch
0.050
0.070
0.090
0.140
Ω
N-Ch 0.70
P-Ch -0.70
V
N-Ch 8.30
P-Ch 4.00
S
N-Ch 1.0
P-Ch
N-Ch
-1.0
25
µA
P-Ch -25
N-P ±100
N-Ch 20
P-Ch 22
N-Ch
P-Ch
2.2
3.3
nC
N-Ch 8.0
P-Ch 9.0
N-Ch 9.0
P-Ch 8.4
N-Ch 42
P-Ch
N-Ch
26
32
ns
P-Ch 51
N-Ch 51
P-Ch 33
N-P
N-P
4.0
6.0
nH
N-Ch 660
P-Ch 610
N-Ch 280
P-Ch 310
pF
N-Ch 140
P-Ch 170
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A
VGS = 2.7V, ID = 2.2A
VGS = -4.5V, ID = -2.2A
VGS = -2.7V, ID = -1.8A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.6A
VDS = -15V, ID = -2.2A
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
Between lead tip
and center of die contact
N-Channel
VGS = 0V, VDS = 15V, = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 2.5
IS
Continuous Source Current (Body Diode)
P-Ch -2.5 A
N-Ch 21
ISM
Pulsed Source Current (Body Diode)
P-Ch -17
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
N-Ch
P-Ch
1.0 V
-1.0
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Ch 29 44 ns N-Channel
P-Ch 56 84
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
N-Ch
P-Ch
22
71
33
110
nC
P-Channel
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
September 3, 2014
No Preview Available ! |
1000
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
IRF7307QPbF
N-Channel
1000
100
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
1
1.5V
20μs PULSE WIDTH
TJ = 25°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
10
1.5V
20μs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0 ID = 4.3A
1.5
1.0
VDS = 15V
20μs PULSE WIDTH
1A
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1200
900
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
600
Coss
300 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
0.5
0.0 VGS = 4.5V A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
10 ID = 2.6A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 11
0A
0 5 10 15 20 25
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Submit Datasheet Feedback
September 3, 2014
Скачать PDF:
[ IRF7307QPBF.PDF Даташит ]
Номер в каталоге | Описание | Производители |
IRF7307QPBF | Power MOSFET ( Transistor ) | International Rectifier |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |