|
|
PDF IRF7306QPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7306QPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF7306QPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
END OF LIFE
PD - 96105B
IRF7306QPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power MOSFET's
are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making
it ideal in a variety of power applications. This dual,
surface mount SO-8 can dramatically reduce board
space and is also available in Tape & Reel.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS = -30V
RDS(on) = 0.10Ω
SO-8
Base part number Orderable part number
Package
Type
IRF7306QPbF
IRF7306QTRPbF
IRF7306QPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tape and Reel 4000
Tube
95
EOL Notice
EOL 529
EOL 527
Replacement Part Number
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient
www.irf.com
Max.
-4.0
-3.6
-2.9
-14
2.0
0.016
±20
-5.0
-55 to + 150
Typ.
Max.
62.5
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
1
07/02/14
1 page  
END OF LIFE
IRF7306QPbF
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
-10
PulseVWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7306QPBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF7306QPBF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |