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PDF IRF7105QPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7105QPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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END OF LIFE
PD - 96102B
IRF7105QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
S1
G1
S2
G2
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
D2 RDS(on)
25V -25V
0.10Ω 0.25Ω
ID 3.5A -2.3A
SO-8
Base part number Orderable part number
Package
Type
IRF7105QPbF
IRF7105QTRPbF
IRF7105QPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tape and Reel 4000
Tube
95
EOL Notice
EOL 527
EOL 529
Replacement Part Number
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
14 -10
2.0
0.016
± 20
3.0 -3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Min.
Typ.
Max.
62.5
Units
°C/W
1
05/20/14
1 page  
END OF LIFE
P-Channel
IRF7105QPbF
-VDS , Drain-to-Source Voltage ( V )
Fig 12. Typical Output Characteristics
-VDS , Drain-to-Source Voltage ( V )
Fig 13. Typical Output Characteristics
-VGS , Gate-to-Source Voltage ( V )
Fig 14. Typical Transfer Characteristics
TJ , Junction Temperature ( °C )
Fig 15. Normalized On-Resistance
Vs. Temperature
-VDS , Drain-to-Source Voltage ( V )
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
QG , Total Gate Charge ( nC )
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
5 Page 
END OF LIFE
IRF7105QPbF
Qualification Information†
Qualification level
Moisture Sensitivity Level
RoHS Compliant
Industrial †
(per JEDEC JESD47F††guidelines)
SO-8
MSL1
(per JEDEC J-STD-020D††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
5/8/2014
Comments
• Added ordering information to reflect the End-Of-life
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
www.irf.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF7105QPBF.PDF ] | |
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