FDS9933BZ PDF даташит
Спецификация FDS9933BZ изготовлена «Fairchild Semiconductor» и имеет функцию, называемую «Dual P-Channel 2.5V Specified PowerTrench MOSFET». |
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Детали детали
Номер произв | FDS9933BZ |
Описание | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
Производители | Fairchild Semiconductor |
логотип |
6 Pages
No Preview Available ! |
March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
tm
-20V, -4.9A, 46mΩ
Features
General Description
Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
Low gate charge (11nC typical).
High performance trench technology for extremely low rDS(on).
HBM ESD protection level >3kV (Note 3).
RoHS Compliant
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Battery Charging
Load Switching
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q 12
Q 21
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-4.9
-30
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
40
78
°C/W
Device Marking
FDS9933BZ
Device
FDS9933BZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
1
www.fairchildsemi.com
No Preview Available ! |
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
ID = -250µA, referenced to 25°C
VDS = -16V, VGS = 0V
VGS = ±12V, VDS = 0V
-20 V
-9 mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
-0.4 -0.9 -1.5
V
ID = -250µA, referenced to 25°C
3 mV/°C
VGS = -4.5V, ID = -4.9A
VGS = -2.5V, ID = -4.0A
VGS = -4.5V, ID = -4.9A, TJ = 125°C
VDD = -10V, ID = -4.9A
38 46
54 69 mΩ
52 67
17 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10V, VGS = 0V,
f = 1MHz
740 985
160 215
145 220
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = -10V, ID = -4.9A,
VGS = -4.5V, RGEN = 6Ω
VDD = -10V, ID = -4.9A
VGS = -4.5V
6.7 14 ns
9.3 19 ns
59 95 ns
47 76 ns
11 15 nC
1.4 nC
3.7 nC
Drain-Source Diode Characteristics
IS Maximum continuous Drain-Sourse Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.3A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -4.9A, di/dt = 100A/µs
-1.3
-0.8 -1.2
46 74
23 37
A
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78°C/W when mounted on a 1 in2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
2
www.fairchildsemi.com
No Preview Available ! |
Typical Characteristics TJ = 25°C unless otherwise noted
30
VGS = -4.5V
25
20
15
VGS = -3.5V
VGS = -3V
VGS = -2.5V
10
5 PULSE DURATION = 80µs VGS = -2V
DUTY CYCLE = 0.5%MAX
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
PULSE DURATION = 80µs
2.5 DUTY CYCLE = 0.5%MAX
2.0 VGS = -2V VGS = -2.5V
VGS = -3V
1.5
1.0
0.5
0
VGS = -3.5V
5 10 15 20
-ID, DRAIN CURRENT(A)
VGS = -4.5V
25 30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -4.9A
VGS = -4.5V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
30
PULSE DURATION = 80µs
25 DUTY CYCLE = 0.5%MAX
20 VDS = -5.0V
15
10
5
0
0.5
TJ = 150oC
TJ = 25oC
TJ = -55oC
1.0 1.5 2.0 2.5 3.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3.5
250
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
200
ID = -4.9A
150
100
TJ = 125oC
50
TJ = 25oC
0
1.5 2.0 2.5 3.0 3.5 4.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
100
VGS = 0V
10
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
3
www.fairchildsemi.com
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Номер в каталоге | Описание | Производители |
FDS9933BZ | Dual P-Channel 2.5V Specified PowerTrench MOSFET | Fairchild Semiconductor |
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