DataSheet26.com

FDS9933BZ PDF даташит

Спецификация FDS9933BZ изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «Dual P-Channel 2.5V Specified PowerTrench MOSFET».

Детали детали

Номер произв FDS9933BZ
Описание Dual P-Channel 2.5V Specified PowerTrench MOSFET
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

6 Pages
scroll

No Preview Available !

FDS9933BZ Даташит, Описание, Даташиты
March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
tm
-20V, -4.9A, 46m
Features
General Description
„ Max rDS(on) = 46mat VGS = -4.5V, ID = -4.9A
„ Max rDS(on) = 69mat VGS = -2.5V, ID = -4.0A
„ Low gate charge (11nC typical).
„ High performance trench technology for extremely low rDS(on).
„ HBM ESD protection level >3kV (Note 3).
„ RoHS Compliant
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
„ Battery Charging
„ Load Switching
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q 12
Q 21
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-4.9
-30
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
40
78
°C/W
Device Marking
FDS9933BZ
Device
FDS9933BZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
1
www.fairchildsemi.com









No Preview Available !

FDS9933BZ Даташит, Описание, Даташиты
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
ID = -250µA, referenced to 25°C
VDS = -16V, VGS = 0V
VGS = ±12V, VDS = 0V
-20 V
-9 mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
-0.4 -0.9 -1.5
V
ID = -250µA, referenced to 25°C
3 mV/°C
VGS = -4.5V, ID = -4.9A
VGS = -2.5V, ID = -4.0A
VGS = -4.5V, ID = -4.9A, TJ = 125°C
VDD = -10V, ID = -4.9A
38 46
54 69 m
52 67
17 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10V, VGS = 0V,
f = 1MHz
740 985
160 215
145 220
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = -10V, ID = -4.9A,
VGS = -4.5V, RGEN = 6
VDD = -10V, ID = -4.9A
VGS = -4.5V
6.7 14 ns
9.3 19 ns
59 95 ns
47 76 ns
11 15 nC
1.4 nC
3.7 nC
Drain-Source Diode Characteristics
IS Maximum continuous Drain-Sourse Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.3A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -4.9A, di/dt = 100A/µs
-1.3
-0.8 -1.2
46 74
23 37
A
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78°C/W when mounted on a 1 in2
pad of 2 oz copper
b) 135°C/W when mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
2
www.fairchildsemi.com









No Preview Available !

FDS9933BZ Даташит, Описание, Даташиты
Typical Characteristics TJ = 25°C unless otherwise noted
30
VGS = -4.5V
25
20
15
VGS = -3.5V
VGS = -3V
VGS = -2.5V
10
5 PULSE DURATION = 80µs VGS = -2V
DUTY CYCLE = 0.5%MAX
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
PULSE DURATION = 80µs
2.5 DUTY CYCLE = 0.5%MAX
2.0 VGS = -2V VGS = -2.5V
VGS = -3V
1.5
1.0
0.5
0
VGS = -3.5V
5 10 15 20
-ID, DRAIN CURRENT(A)
VGS = -4.5V
25 30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -4.9A
VGS = -4.5V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
30
PULSE DURATION = 80µs
25 DUTY CYCLE = 0.5%MAX
20 VDS = -5.0V
15
10
5
0
0.5
TJ = 150oC
TJ = 25oC
TJ = -55oC
1.0 1.5 2.0 2.5 3.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3.5
250
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
200
ID = -4.9A
150
100
TJ = 125oC
50
TJ = 25oC
0
1.5 2.0 2.5 3.0 3.5 4.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
100
VGS = 0V
10
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
3
www.fairchildsemi.com










Скачать PDF:

[ FDS9933BZ.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
FDS9933BZDual P-Channel 2.5V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск