QM07N60F PDF даташит
Спецификация QM07N60F изготовлена «UBIQ» и имеет функцию, называемую «N-Ch 650V Fast Switching MOSFETs». |
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Детали детали
Номер произв | QM07N60F |
Описание | N-Ch 650V Fast Switching MOSFETs |
Производители | UBIQ |
логотип |
4 Pages
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QM07N60F
機密
第1頁
2011-04-29 - 1 -
N-Ch 600V Fast Switching MOSFETs
General Description
The QM07N60F is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The QM07N60F meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
600V
RDSON
1.35 Ω
ID
7A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
EAS
IAS
PD@TC=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
G DS
Rating
600
±30
7
4.5
14
22
6.6
70
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
1.8
Units
V
V
A
A
A
mJ
A
W
℃
℃
Unit
℃/W
℃/W
Rev A.01 D042611
1
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QM07N60F
機密
第2頁
2011-04-29 - 2 -
N-Ch 600V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
△VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
gfs Forward Transconductance
Rg Gate Resistance
Qg Total Gate Charge (10V)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Td(on)
Turn-On Delay Time
Tr Rise Time
Td(off)
Turn-Off Delay Time
Tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25℃ , ID=1mA
VGS=10V , ID=3.5A
VGS=VDS , ID =250uA
VDS=480V , VGS=0V , TJ=25℃
VGS=±30V , VDS=0V
VDS=10V , ID=3A
VDS=0V , VGS=0V , f=1MHz
VDS=480V , VGS=10V , ID=1A
VDD=300V , VGS=10V , RG=10Ω,
ID=1A
VDS=25V , VGS=0V , F=1MHz
Min.
600
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.56
1.1
---
-8.6
---
---
4.3
3.3
26
7.4
8.7
15
18.8
44
34
1346
76
3.2
Max.
---
---
1.35
5
---
2
±100
---
6.6
36
10.4
12.2
30
33.8
88
68
1884
106
4.5
Unit
V
V/℃
Ω
V
mV/℃
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Diode Characteristics
Conditions
VDD=50V , L=1mH , IAS=3.5A
Min.
6.6
Typ.
---
Max.
---
Unit
mJ
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
157
610
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=6.6A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
7
14
1
---
---
Unit
A
A
V
nS
nC
2
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機密
Typical Characteristics
第3頁
QM07N60F
2011-04-29 - 3 -
N-Ch 600V Fast Switching MOSFETs
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
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QM07N60F | N-Ch 650V Fast Switching MOSFETs | UBIQ |
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