(PDF) PE636BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PE636BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 33A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 33 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 21 10 Pulsed Drain Current1 TA= 70 °C IDM 8 100 Avalanche Current IAS 20 Avalanche Energy L =0.1mH EAS 20 TC = 25 °C 17.8 Power Dissipation TC = 100 °C TA = 25 °C PD 7 1.7 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 75 Junction-to-Case RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 13A UNITS °C / W REV 1.0 1 2015/5/29 1 page PE636BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/5/29 5 Page

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PDF PE636BA Data sheet ( Hoja de datos )