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2N3904 PDF даташит

Спецификация 2N3904 изготовлена ​​​​«TAITRON» и имеет функцию, называемую «Small Signal General Purpose Transistors».

Детали детали

Номер произв 2N3904
Описание Small Signal General Purpose Transistors
Производители TAITRON
логотип TAITRON логотип 

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2N3904 Даташит, Описание, Даташиты
Small Signal General
Purpose Transistors (NPN)
2N3903/2N3904
Small Signal General Purpose Transistors (NPN)
Features
NPN Silicon Epitaxial Transistor for Switching and
Amplifier Applications
RoHS Compliance
Mechanical Data
Case:
Terminals:
Weight:
TO-92, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.18 gram
TO-92
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N3903
2N3904
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
40
60
6.0
200
Power Dissipation at TA=25°C
PD
Derate above 25°C
625
5.0
PD
RθJA
RθJC
TJ ,TSTG
Power Dissipation at TC=25°C
Derate above 25°C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Case
Operation and Storage Junction Temperature
Range
1.5
12
200
83.3
-55 to +150
Unit
V
V
V
mA
mW
mW/° C
W
mW/° C
° C/W
° C/W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. A/AH
Page 1 of 4









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2N3904 Даташит, Описание, Даташиты
Small Signal General Purpose Transistors (NPN)
2N3903/2N3904
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCE(sat)* Collector Emitter Saturation Voltage
VBE(sat)* Base Emitter Saturation Voltage
ICEX
IBL
Collector Cut–Off Current
Base Cut–Off Current
hFE*
D.C. Current Gain
hfe Small Signal Current Gain
hie Input Impedance
hre Voltage Feedback Ratio
hoe Output Admittance
fT Current Gain-Bandwidth Product
Cob Output Capacitance
Cib Input Capacitance
NF Noise Figure
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
2N3903
Min. Max.
60 -
2N3904
Min. Max.
60 -
40 - 40 -
6.0 - 6.0 -
- 0.2 - 0.2
- 0.3 - 0.3
0.65 0.85 0.65 0.85
- 0.95 - 0.95
- 50 - 50
- 50 - 50
20 - 40 -
35 - 70 -
50 150 100 300
30 - 60 -
15 - 30 -
50 200 100 400
1.0 8.0 1.0 10
0.1 5.0 0.5 8.0
1.0 40 1.0 40
250 - 300 -
- 4.0 - 4.0
- 8.0 - 8.0
- 6.0 - 5.0
- 35 - 35
- 35 - 35
- 175 - 200
- 50 - 50
Unit
V
V
V
V
V
nA
nA
k
x10־4
μS
MHz
pF
pF
dB
nS
nS
nS
nS
Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VEB=3V, VCE=30V
VEB=3V, VCE=30V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=10V, IC=1mA
f=1KHz
VCE=10V, IC=1mA
f=1KHz
VCE=10V, IC=1mA
f=1KHz
VCE=10V, IC=1mA
f=1KHz
VCE=20V, IC=10mA,
f=100MHz
VCB=5V, IE=0
f=1MHz
VEB=0.5V, IC=0
f=1MHz
VCE=5V, IC=100µA,
Rs=1K, f=1KHz
VCC=3V, VBE=0.5V
IC=10mA, IB1=1mA
VCC=3V, IC=10mA
IB1=IB2=1mA
www.taitroncomponents.com
Rev. A/AH
Page 2 of 4









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2N3904 Даташит, Описание, Даташиты
Small Signal General Purpose Transistors (NPN)
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%
2N3903/2N3904
Dimensions in mm
TO-92
www.taitroncomponents.com
Rev. A/AH
Page 3 of 4










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