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SILICON HIGH-POWER NPN TRANSISTOR
…designed for use in power switching circuits.
…designed for use in series and shunt regulators.
…designed for use in output stages and high fidelity amplifiers.
2N3055
MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Value
100
60
7
15
7
115
200
-65~200
Unit
V
V
V
A
A
W
°C
°C
1 : Base
2 : Emitter
3 : Collector (Heat Sink)
Unit in mm
TO-3
Weight: 17g
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol Test Condition
Min. Typ. Max.
Collector Cut-off Current
ICEX
VCB=100V
--1
VCE=100V, Tj=150°C
-
-
5
Collector Cut-off Current
ICEO
VCB=30V, IB=0
- - 0.7
Emitter Cut-off Current
IEBO
VEB=7V, IC=0
--5
DC Current Gain
hFE IC=4A, VCE=4V
20 - 70
IC=10A, VCE=4V
5-
-
Collector-Emitter Sustaining Voltage VCEO(sus) IC=200mA
60 -
-
Collector-Emitter Sustaining Voltage VCEO(sus) IC=200mA
70 -
-
Collector-Emitter Saturation Voltage VCE(sat) IC=4, IB=400mA
--1
IC=10, IB=3.3A
--3
Base-Emitter Voltage
VBE
VCE=4V, IC=4A
- - 1.8
Transition Frequency
fT VCE=10V, IC=0.5A 3 -
-
Unit
mA
mA
mA
mA
-
-
V
V
V
V
V
MHz
15 AMPERE
SILICON POWER
TRANSISTORS
TO-3
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suitability of its products for any particular purpose, nor does PMC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
PMC Components Pte Ltd. , Singapore, 2000