2N3055 PDF даташит
Спецификация 2N3055 изготовлена «Multicomp» и имеет функцию, называемую «Complementary Power Transistors». |
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Детали детали
Номер произв | 2N3055 |
Описание | Complementary Power Transistors |
Производители | Multicomp |
логотип |
5 Pages
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2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C.
• DC current gain hFE = 20 to 70 at IC = 4.0A.
• VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base
2. Emitter
Collector(Case)
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN
2N3055
PNP
MJ2955
15 Ampere
Complementary Silicon
Power Transistors
60 Volts
115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
IC
IB
PD
TJ, TSTG
Rating
60
70
100
7.0
15
7.0
115
0.657
-65 to +200
Unit
V
A
W
W/°C
°C
Page 1
31/05/05 V1.0
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2N3055, MJ2955
Complementary Power Transistors
Thermal Characteristics
Characteristic
Symbol
Thermal Resistance Junction to Case
Rθjc
Figure - 1 Power Derating
Maximum
1.52
Unit
°C/W
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, IB = 0)
Collector-Emitter Sustaining Voltage (1)
(IC = 200mA, RBE = 100Ω)
Collector Cut off Current
(VCE = 30V, IB = 0)
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V)
(VCE = 100V, VBE(off) = 1.5V, TC = 150°C)
Emitter Cut off Current
(VEB = 7.0V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 4.0A, VCE = 4.0V)
(IC = 10A, VCE = 4.0A)
Collector-Emitter Saturation Voltage
(IC = 4.0A, IB = 0.4A)
(IC = 10A, IB = 3.3A)
Base-Emitter On Voltage
(IC = 4.0A, VCE = 4.0V)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC = 500mA, VCE = 10V, f = 1.0MHz)
Small-Signal Current Gain
(IC = 1.0A, VCE = 4.0V, f = 1KHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
(2) fT = hfe • ftest.
VCEO(sus)
VCER(sus)
ICEO
ICEX
IEBO
hFE
VCE(sat)
VBE(on)
fT
hfe
60
70
-
-
-
20
5.0
-
-
2.5
15
Maximum
-
-
0.7
1.0
5.0
5.0
70
1.1
3.0
1.5
-
120
Unit
V
mA
-
V
MHz
-
Page 2
31/05/05 V1.0
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2N3055, MJ2955
Complementary Power Transistors
Active-Region Safe Operating Area (SOA)
VCE, Collector Emitter Voltage (Volts)
NPN 2N3055
DC Current Gain
There are two limitations on the power handling ability of a transistor:
average junction temperature and second breakdown safe operating
area curves indicate IC-VCE limits of the transistor that must be
observed for reliable operation i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of SOA curve is based on TJ(PK) = 200°C; TC is variable
depending on conditions. Second breakdown pulse limits are valid
for duty cycles to 10% provided TJ(PK)≤200°C. At high case
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
PNP MJ2955
DC Current Gain
IC, Collector Current (AMP)
Collector Saturation Region
IC, Collector Current (AMP)
Collector Saturation Region
IB, Base Current (mA)
Page 3
IB, Base Current (mA)
31/05/05 V1.0
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