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Número de pieza | Si7344DP | |
Descripción | N-Channel 20-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Si7344DP (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N-Channel 20-V (D-S) MOSFET
Si7344DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.008 @ VGS = 10 V
20
0.012 @ VGS = 4.5 V
ID (A)
17
14
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7344DP-T1
Si7344DP-T1—E3 (Lead (Pb)-Free)
FEATURES
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07-mm Profile
• PWM Optimized
Available
RoHS*
COMPLIANT
APPLICATIONS
• DC/DC conversion High-Side
- Desktop
- Server
• Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150°C)a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
±20
17 11
14 9
50
3.7 1.6
4.1 1.8
2.6 1.1
–55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 sec
Steady State
RthJA
22
55
30
70 °C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.5
5.5
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72128
S-51773-Rev. B, 31-Oct-05
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Si7344DP
Vishay Siliconix
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72128.
Document Number: 72128
S-51773-Rev. B, 31-Oct-05
www.vishay.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet Si7344DP.PDF ] |
Número de pieza | Descripción | Fabricantes |
Si7344DP | N-Channel 20-V (D-S) MOSFET | Vishay |
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