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Si6459BDQ PDF даташит

Спецификация Si6459BDQ изготовлена ​​​​«Vishay» и имеет функцию, называемую «P-Channel 60 V (D-S) MOSFET».

Детали детали

Номер произв Si6459BDQ
Описание P-Channel 60 V (D-S) MOSFET
Производители Vishay
логотип Vishay логотип 

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Si6459BDQ Даташит, Описание, Даташиты
P-Channel 60 V (D-S) MOSFET
Si6459BDQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60 0.115 at VGS = - 10 V
0.150 at VGS = - 4.5 V
ID (A)
- 2.7
- 2.4
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
S*
TSSOP-8
D1
S2
S3
G4
Si6459BDQ
8D
7S
6S
5D
Top View
Ordering Information: Si6459BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
- 2.7
- 2.2
- 2.2
- 1.8
Pulsed Drain Current (10 µs Pulse Width)
IDM - 20
Continuous Source Current (Diode Conduction)a
IS
- 1.25
- 0.83
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.50 1.0
1.0 0.67
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
66
100
50
Maximum
83
120
60
Unit
°C/W
Document Number: 72518
S10-2138-Rev. C, 20-Sep-10
www.vishay.com
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Si6459BDQ Даташит, Описание, Даташиты
Si6459BDQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V, TJ = 70 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS - 10 V, ID = - 2.7 A
VGS = - 4.5 V, ID = - 2.4 A
Forward Transconductancea
gfs VDS = - 15 V, ID = - 2.7 A
Diode Forward Voltagea
VSD IS = - 1.25 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 30 V, VGS = - 10 V, ID = - 2.7 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 30 V, RL = 30
ID - 1 A, VGEN = - 10 V, Rg = 6
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = - 1.25 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
-1 -3
± 100
-1
- 10
- 20
0.092 0.115
0.120 0.150
8
- 0.8
- 1.2
V
nA
µA
A
S
V
14.5
2.2
3.7
14
10
15
50
35
30
22
15
22
75
55
50
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20 20
VGS = 10 V thru 5 V
16 16
12 12
4V
88
4
3V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
0
0
TC = 125 °C
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
www.vishay.com
2
Document Number: 72518
S10-2138-Rev. C, 20-Sep-10









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Si6459BDQ Даташит, Описание, Даташиты
Si6459BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.30 1000
0.25
0.20
0.15
VGS = 4.5 V
0.10
VGS = 10 V
0.05
0.00
0
4 8 12 16
ID - Drain Current (A)
On-Resistance vs. Drain Current
20
800
Ciss
600
400
200
Coss
Crss
0
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
10
VDS = 30 V
ID = 2.7 A
8
6
4
2
1.8
VGS = 10 V
1.6 ID = 2.7 A
1.4
1.2
1.0
0.8
0
0 3 6 9 12 15
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
20
TJ = 150 °C
10
0.30
0.25
0.20
0.15
ID = 2.7 A
0.10
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.05
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72518
S10-2138-Rev. C, 20-Sep-10
www.vishay.com
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