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PDF Si5857DU Data sheet ( Hoja de datos )
| Número de pieza | Si5857DU | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si5857DU
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
0.058 at VGS = - 4.5 V
0.100 at VGS = - 2.5 V
ID (A)a
6
6
Qg (Typ.)
5.5 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
VF (V)
Diode Forward Voltage
0.375 at 1 A
IF (A)a
2
PowerPAK® ChipFET® Dual
1
A
2
Marking Code
JA XXX
Lot Traceability
and Date Code
K
A3
Part # Code
8K
S4
3.07mm 6 D
D
G
5 1.8 mm
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Charging Switch for Portable Devices
- With Integrated Low VF Trench Schottky Diode
SK
G
Bottom View
Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VKA
VGS
ID
IDM
IS
IF
IFM
PD
PD
TJ, Tstg
Limit
- 20
20
± 12
6a
6a
- 5b, c
- 4b, c
- 20
- 6a
1.9b, c
2
7
10.4
6.7
2.3b, c
1.5b, c
7.8
5
2.1b, c
1.3b, c
- 55 to 150
260
Unit
V
A
W
W
°C
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
www.vishay.com
1
1 page  
Si5857DU
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 0.16
0.14
10
0.12
ID = 3.6 A
TJ = 150 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
0.10
0.08
TA = 125 °C
0.06
TA = 25 °C
0.04
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
1.2 ID = 250 µA
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature ( °C)
Threshold Voltage
100
Limited by RDS(on)*
10 ID(on) limited
25
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
IDM limited
100 µs
1 1 ms
10 ms
100 ms
1s
0.1 10 s
TA = 25 °C
Single Pulse
BVDSS limited
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
www.vishay.com
5
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| PDF Descargar | [ Datasheet Si5857DU.PDF ] | |
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