DataSheet26.com

Si5856DC PDF даташит

Спецификация Si5856DC изготовлена ​​​​«Vishay» и имеет функцию, называемую «N-Channel 1.8 V (G-S) MOSFET».

Детали детали

Номер произв Si5856DC
Описание N-Channel 1.8 V (G-S) MOSFET
Производители Vishay
логотип Vishay логотип 

7 Pages
scroll

No Preview Available !

Si5856DC Даташит, Описание, Даташиты
Si5856DC
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 4.5 V
20 0.045 at VGS = 2.5 V
0.052 at VGS = 1.8 V
ID (A)
5.9
5.6
5.2
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (V)
Diode Forward Voltage
0.375 V at 1.0 A
IF (A)
1.0
1206-8 ChipFET®
1
A
KA
KS
DG
D
Marking Code
JD XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5856DC-T1-E3 (Lead (Pb)-free)
Si5856DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Ultra Low RDS(on)
• Ultra Low VF Schottky
• Si5853DC Pin Compatible
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Buck Rectifier Switch, Buck-Boost
• Synchronous Rectifier or Load
• Switch for Portable Devices
D
K
G
S
N-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
VDS 20
Reverse Voltage (Schottky)
VKA 20
V
Gate-Source Voltage (MOSFET)
VGS ± 8
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C
TA = 85 °C
ID
5.9
4.2
4.4
3.1
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
IDM 20
IS 1.8
0.9
A
Average Forward Current (Schottky)
IF 1.0
Pulsed Forward Current (Schottky)
IFM 7
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 85 °C
PD
2.1
1.1
1.9
1.0
1.1
0.6
W
1.1
0.56
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
1









No Preview Available !

Si5856DC Даташит, Описание, Даташиты
Si5856DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
t5s
Steady State
Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
50
54
90
95
30
30
Maximum
60
65
110
115
40
40
Unit
°C/W
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 4.4 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 4.1 A
VGS = 1.8 V, ID = 1.9 A
Forward Transconductancea gfs VDS = 10 V, ID = 4.4 A
Diode Forward Voltagea
Dynamicb
VSD IS = 1.0 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 0.9 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
0.4 1.0 V
± 100
nA
1
µA
5
20 A
0.032 0.040
0.036 0.045
Ω
0.042 0.052
22 S
0.8 1.2
V
5
0.85
1
20
36
30
12
45
7.5
30
55
45
20
90
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
VF
IF = 1.0 A
IF = 1.0 A, TJ = 125 °C
Vr = 20 V
Maximum Reverse Leakage Current
Irm
Vr = 20 V, TJ = 85 °C
Vr = 20 V, TJ = 125 °C
Junction Capacitance CT Vr = 10 V
Min.
Typ.
0.34
0.255
0.05
2
10
90
Max.
0.375
0.290
0.500
20
100
Unit
V
mA
pF
www.vishay.com
2
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10









No Preview Available !

Si5856DC Даташит, Описание, Даташиты
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 20
VGS = 5 V thru 2 V
16
16
12
1.5 V
8
12
8
Si5856DC
Vishay Siliconix
TC = - 55 °C
25 °C
125 °C
4
0
0
0.10
1V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
0.08
0.06
0.04
VGS = 1.8 V
0.02
VGS = 2.5 V
VGS = 4.5 V
0.00
0
4 8 12 16
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 4.4 A
4
20
4
0
0.0 0.4 0.8 1.2 1.6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
700
600
Ciss
500
400
300
200
100
0
0
Crss
Coss
48
12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 4.4 A
1.4
2.0
20
3 1.2
2 1.0
1 0.8
0
0123456
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72234
S10-0548-Rev. D, 08-Mar-10
www.vishay.com
3










Скачать PDF:

[ Si5856DC.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
Si5856DCN-Channel 1.8 V (G-S) MOSFETVishay
Vishay

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск