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PDF Si4170DY Data sheet ( Hoja de datos )
| Número de pieza | Si4170DY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFET
Si4170DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.0035 at VGS = 10 V
0.0045 at VGS = 4.5 V
ID (A)a
30
27
Qg (Typ.)
29 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4170DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
APPLICATIONS
• Notebook PC Core
- Low Side Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IDM
IS
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
30
22.8
21.8b, c
17.3b, c
70
5.4
2.7b, c
40
80
6
3.3
3.0b, c
1.9b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
33
16
Maximum
42
21
RoHS
COMPLIANT
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68396
S-81054-Rev. A, 12-May-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
Si4170DY
Vishay Siliconix
28
21
14
7
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.5 1.80
6.0 1.44
4.5 1.08
3.0 0.72
1.5 0.36
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68396
S-81054-Rev. A, 12-May-08
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si4170DY.PDF ] | |
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