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PDF SiR888DP Data sheet ( Hoja de datos )
| Número de pieza | SiR888DP | |
| Descripción | N-Channel 25-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
N-Channel 25-V (D-S) MOSFET
SiR888DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.00325 at VGS = 10 V
25
0.0040 at VGS = 4.5 V
ID (A)a
40g
40g
Qg (Typ.)
35.5 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
• Low-Side Switch in Synchronous Buck Converter
6.15 mm
S
1S
5.15 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: SIR888DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
25
± 16
40g
40g
29b, c
23b, c
70
40g
4.5b, c
40
80
48
31
5.0b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
20
2.1
25 °C/W
2.6
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.
Document Number: 68627
S-81010-Rev. A, 05-May-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
SiR888DP
Vishay Siliconix
80
60 Package Limited
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
60 2.5
48 2.0
36 1.5
24 1.0
12 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68627
S-81010-Rev. A, 05-May-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SiR888DP.PDF ] | |
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