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PDF SiB419DK Data sheet ( Hoja de datos )
| Número de pieza | SiB419DK | |
| Descripción | P-Channel 12-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 12-V (D-S) MOSFET
SiB419DK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.060 at VGS = - 4.5 V
- 12 0.082 at VGS = - 2.5 V
0.114 at VGS = - 1.8 V
ID (A)f, g
-9
-9
-2
Qg (Typ.)
7.15 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
RoHS
COMPLIANT
PowerPAK SC-75-6L-Single
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
S
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
Marking Code
Part # code
BFX
XXX
Lot Traceability
and Date code
G
Ordering Information: SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TA = 70 °C
TJ, Tstg
Limit
- 12
±8
-9
-9
- 5.2a, b
- 4.2a, b
- 15
- 10.9
- 2.0a, b
13.1
8.4
2.45a, b
1.6a, b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
41
7.5
51 °C/W
9.5
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 105 °C/W.
f. Based on TC = 25 °C.
g. Package Limited.
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15 16
SiB419DK
Vishay Siliconix
12
12
9
8
6
4
3
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SiB419DK.PDF ] | |
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