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PDF Si7121DN Data sheet ( Hoja de datos )
| Número de pieza | Si7121DN | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 30-V (D-S) MOSFET
Si7121DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.018 at VGS = - 10 V
- 30
0.0305 at VGS = - 4.5 V
ID (A)
- 16d
- 16d
Qg (Typ.)
22 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100% Rg Tested
• 100% UIS Tested
RoHS
COMPLIANT
PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: Si7121DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Notebook Battery Charging
• Notebook Adapter Switch
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)e, f
Limit
- 30
± 25
- 16d
- 16d
- 10.6a, b
- 8.6a, b
- 50
- 16d
- 3.0a, b
- 20
20
52
33
3.7a, b
2.4a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 81 °C/W.
d. Package limited.
e. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
www.vishay.com
1
1 page  
New Product
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
Si7121DN
Vishay Siliconix
36
27
18 Package Limited
9
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
65 2.0
52 1.6
39 1.2
26 0.8
13 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69956
S-81466-Rev. C, 23-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si7121DN.PDF ] | |
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