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PDF SiB413DK Data sheet ( Hoja de datos )
| Número de pieza | SiB413DK | |
| Descripción | P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
P-Channel 20-V (D-S) MOSFET
SiB413DK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20 0.075 at VGS = - 4.5 V
0.143 at VGS = - 2.5 V
ID (A)a, f
-9
- 7.8
Qg (Typ.)
4.56 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
RoHS
COMPLIANT
PowerPAK SC-75-6L-Single
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
S
Marking Code
Part # code
BCX
XXX
Lot Traceability
and Date code
Ordering Information: SiB413DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TA = 70 °C
TJ, Tstg
Limit
- 20
± 12
- 9a
- 8.6
- 4.5a, b
- 3.7a, b
12
- 9a
- 2a, b
13
8.4
2.4a, b
1.6a, b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 105 °C/W.
f. Based on TC = 25 °C.
Document Number: 70441
S-80515-Rev. C, 10-Mar-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12 16
SiB413DK
Vishay Siliconix
9 12
68
34
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70441
S-80515-Rev. C, 10-Mar-08
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SiB413DK.PDF ] | |
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