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PDF Si5980DU Data sheet ( Hoja de datos )
| Número de pieza | Si5980DU | |
| Descripción | Dual N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si5980DU
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.567 at VGS = 10 V
ID (A)
2.5
Qg (Typ.)
2.2 nC
PowerPAK® ChipFET Dual
1
S1 2
D1
8 D1
7
6
G1
D2
D2
5
3
S2 4
G2
Marking Code
CE XXX
Lot Traceability
and Date Code
Part # Code
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D1
D2
• Load Supply
• Power Supply
G1 G2
Bottom View
Ordering Information: Si5980DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IS
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
100
± 20
2.5
2.0
1.3b, c
1.0b, c
3
6a
1.7b, c
2
0.2
7.8
5.0
2.0b, c
1.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
49
13
61
°C/W
16
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 65576
S10-0033-Rev. A, 11-Jan-10
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Current Derating*
150
10 1.5
Si5980DU
Vishay Siliconix
8 1.2
6 0.9
4 0.6
2 0.3
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65576
S10-0033-Rev. A, 11-Jan-10
www.vishay.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Si5980DU.PDF ] | |
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