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PDF Si1865DDL Data sheet ( Hoja de datos )
| Número de pieza | Si1865DDL | |
| Descripción | Load Switch | |
| Fabricantes | Vishay | |
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Load Switch with Level-Shift
Si1865DDL
Vishay Siliconix
PRODUCT SUMMARY
VIN (VDS2) (V)
RDS(on) () Max.
0.200 at VIN = 4.5 V
1.8 to 12
0.300 at VIN = 2.5 V
0.508 at VIN = 1.8 V
ID (A)
1.1
0.9
0.7
DESCRIPTION
The Si1865DDL includes a p- and n-channel MOSFET in
a single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1865DDL operates
on supply lines from 1.8 V to 12 V, and can drive loads up to
1.1 A.
FEATURES
• Low RDS(on) TrenchFET®
• 1.8 V to 12 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• 2000 V ESD Protection On Input Switch, VON/OFF
• Adjustable Slew-Rate
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch with Level-Shift
• Slew-rate Control
• Portable/Consumer Devices
APPLICATION CIRCUITS
Si1865DDL
VIN
R1
4
Q2
6
2, 3
C1
6
ON/OFF
Ci
R2
5
Q1
1
R2
Co
VOUT
LOAD
GND
14
10.5
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tf
7
tr
3.5 td(off)
td(on)
0
0 2 4 6 8 10
R2 (kΩ)
Switching Variation R2 at VIN = 2.5 V, R1 = 20 k
COMPONENTS
R1 Pull-Up Resistor
Typical 10 k to 1 Ma
R2 Optional Slew-Rate Control
Typical 0 to 100 ka
C1 Optional Slew-Rate Control
Typical 1000 pF
Note:
a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si1865DDL is ideally suited for high-side load switching
in portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Document Number: 62888
For technical questions, contact: [email protected]
www.vishay.com
S13-2618-Rev. B, 23-Dec-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
Si1865DDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
150
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tr
100
50
0
0
tf
td(off)
td(on)
20 40 60 80 100
R2 (kΩ)
Switching Variation R2 at VIN = 2.5 V, R1 = 300 k
350
280
210
IL = 1 A
VON/OFF = 3 V
Ci = 10 µF
Co = 1 µF
tr
140
70
td(off)
0
0 20
tf
40 60
R2 (kΩ)
td(on)
80 100
Switching Variation R2 at VIN = 1.8 V, R1 = 300 k
10
Limited by RDS(on)*
1
100 μs
1 ms
10 ms
0.1 100 ms
1s
0.01
TA = 25 °C
Single Pulse
DC, 10 s
BVDSS Limited
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Foot
1
Duty Cycle = 0.5
0.2
0.1 0.1
Notes:
PDM
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01 0.1
Square Wave Pulse Duration (s)
1
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 130 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62888.
Document Number: 62888
For technical questions, contact: [email protected]
www.vishay.com
S13-2618-Rev. B, 23-Dec-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si1865DDL.PDF ] | |
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