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PDF SiA427ADJ Data sheet ( Hoja de datos )
| Número de pieza | SiA427ADJ | |
| Descripción | P-Channel 8V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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P-Channel 8 V (D-S) MOSFET
SiA427ADJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) () (Max.)
0.016 at VGS = - 4.5 V
0.0215 at VGS = - 2.5 V
0.026 at VGS = - 1.8 V
0.032 at VGS = - 1.5 V
0.095 at VGS = - 1.2 V
ID (A)
- 12a
- 12a
- 12a
- 12a
-3
Qg (Typ.)
30 nC
PowerPAK SC-70-6L-Single
FEATURES
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Ordering Information:
SiA427ADJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
SiA427ADJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
• Load Switch, for 1.2 V Power Line for Portable and
Handheld Devices
S
Marking Code
Part # code
BTX
XXX
Lot Traceability
and Date code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
-8
±5
- 12a
- 12a
- 12a, b, c
- 9.9b, c
- 50
- 12a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63651
For more information please contact: [email protected]
www.vishay.com
S12-1141-Rev. B, 21-May-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
35 20
30
25 15
20
15 Package Limited
10
5
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
SiA427ADJ
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63651
For more information please contact: [email protected]
www.vishay.com
S12-1141-Rev. B, 21-May-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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| PDF Descargar | [ Datasheet SiA427ADJ.PDF ] | |
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