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Número de pieza | SUM36N20-54P | |
Descripción | N-Channel 200 V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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No Preview Available ! SUM36N20-54P
Vishay Siliconix
N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
RDS(on) ()
0.053 at VGS = 15 V
0.054 at VGS = 10 V
ID (A)
36
36
Qg (Typ.)
57
TO-263
G DS
Top View
Ordering Information: SUM36N20-54P-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET® Power MOSFETs
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
• Lighting Systems
RoHS
COMPLIANT
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 74295
S10-1053-Rev. C, 03-May-10
Symbol
RthJA
RthJC
Limit
200
± 25
36
22.6
80
20
20
166b
3.12
- 55 to 175
Unit
V
A
mJ
W
°C
Limit
40
0.75
Unit
°C/W
www.vishay.com
1
1 page THERMAL RATINGS
40
32
24
16
8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Maximum Drain Curent vs. Case Temperature
1
Duty Cycle = 0.5
SUM36N20-54P
Vishay Siliconix
100
Limited by RDS (on)*
10
100 µs
TC = 25 °C
1 Single Pulse
1 ms
10 ms
100 ms
DC
0.1
0.1
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS (on) is specified
Safe Operating Area
1000
0.2
0.1
0.1
0.01
10-4
0.02
Single Pulse
0.05
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74295.
Document Number: 74295
S10-1053-Rev. C, 03-May-10
www.vishay.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SUM36N20-54P.PDF ] |
Número de pieza | Descripción | Fabricantes |
SUM36N20-54P | N-Channel 200 V (D-S) MOSFET | Vishay |
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