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SiB411DK PDF даташит

Спецификация SiB411DK изготовлена ​​​​«Vishay» и имеет функцию, называемую «P-Channel 20-V (D-S) MOSFET».

Детали детали

Номер произв SiB411DK
Описание P-Channel 20-V (D-S) MOSFET
Производители Vishay
логотип Vishay логотип 

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SiB411DK Даташит, Описание, Даташиты
P-Channel 20-V (D-S) MOSFET
SiB411DK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.066 at VGS = - 4.5 V
- 20 0.094 at VGS = - 2.5 V
0.130 at VGS = - 1.8 V
PowerPAK SC-75-6L-Single
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
ID (A)
- 9a
- 9a
- 9a
Qg (Typ.)
6 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
S
Marking Code
Part # code
BBX
XXX
Lot Traceability
and Date code
Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 20
±8
- 9a
- 8.9a
- 4.8b, c
- 3.8b, c
- 15
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
41
7.5
51
°C/W
9.5
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
www.vishay.com
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SiB411DK Даташит, Описание, Даташиты
SiB411DK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 3.3 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 2.8 A
VGS = - 1.8 V, ID = - 0.77 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 3.3 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 2.1 Ω
ID - 4.8 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 2.1 Ω
ID - 4.8 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 3.8 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 3.8 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.4
15
Typ.
Max.
Unit
- 18
2.2
0.055
0.077
0.107
9.5
-1
± 100
-1
- 10
0.066
0.094
0.130
V
mV/°C
V
nA
µA
A
Ω
S
470
95
65
10 15
69
0.9
1.4
7.5
10 15
40 60
45 70
75 115
5 10
10 15
25 40
10 15
- 0.85
20
10
15
5
-9
15
- 1.2
40
20
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74335
S-80515-Rev. C, 10-Mar-08









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SiB411DK Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
VGS = 5 thru 3 V
12
2.5 V
2.0
1.6
SiB411DK
Vishay Siliconix
9 1.2
2V
6 0.8 25 °C
3
1.5 V
0
0.0 0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
0.15
VGS = 1.8 V
0.10
0.05
VGS = 2.5 V
VGS = 4.5 V
0.00
0 3 6 9 12 15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 4.8 A
6
VDS = 10 V
4
VGS = 16 V
2
0.4
0.0
0.0
TC = 125 °C
- 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
700
600
Ciss
500
400
300
200
100
0
0
Crss
4
Coss
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 3.3 A
1.4 VGS = 4.5 V, 2.5 V, 1.8 V
1.5
20
1.2
1.0
0.8
0
0 2 4 6 8 10
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
12
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
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