|
|
PDF SiA810DJ Data sheet ( Hoja de datos )
| Número de pieza | SiA810DJ | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SiA810DJ (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
New Product
SiA810DJ
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.053 at VGS = 4.5 V
0.063 at VGS = 2.5 V
0.077 at VGS = 1.8 V
ID (A)a
4.5
4.5
4.5
Qg (Typ.)
4.1 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20 0.45 at 1 A
IF (A)a
2
PowerPAK SC-70-6 Dual
FEATURES
• Halogen-free
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
RoHS
SC-70 Package
COMPLIANT
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Low Vf Trench Schottky Diode
APPLICATIONS
• Load Switch for Portable Devices (MP3/Cellular)
• Boost Converter
D
1
A
2
NC
K
3
D
K
6D
G
5
2.05 mm S
4
2.05 mm
0.75 mm
Marking Code
Part # code
GAX
XXX
Lot Traceability
and Date code
Ordering Information: SiA810DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
K
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (Schottky)
VKA
Gate-Source Voltage (MOSFET)
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (MOSFET)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
TC = 25 °C
TA = 25 °C
IS
IF
Pulsed Forward Current (Schottky)
IFM
TC = 25 °C
Maximum Power Dissipation (MOSFET)
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
PD
Maximum Power Dissipation (Schottky)
TC = 70 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
20
20
±8
4.5a
4.5a
4.5a, b, c
3.8b, c
20
4.5a
1.6b, c
2b
5
6.5
5
1.9b, c
1.2b, c
6.8
4.3
1.6b, c
1.0b, c
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
www.vishay.com
1
1 page  
New Product
SiA810DJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100 0.14
0.12
10 0.10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.9
0.8
0.7 ID = 250 µA
0.6
0.5
0.4
0.3
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.08
ID = 3.7 A, 125 °C
0.06
0.04
ID = 3.7 A, 25 °C
0.02
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10
1
0.1
TA = 25 °C
Single Pulse
100 µs
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74957
S-80436-Rev. B, 03-Mar-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SiA810DJ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SiA810DJ | N-Channel 20-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |