|
|
PDF Si8404DB Data sheet ( Hoja de datos )
| Número de pieza | Si8404DB | |
| Descripción | N-Channel 1.5-V (G-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si8404DB (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
N-Channel 1.5-V (G-S) MOSFET
Si8404DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.031 at VGS = 4.5 V
0.033 at VGS = 2.5 V
8
0.035 at VGS = 1.8 V
0.043 at VGS = 1.5 V
ID (A)a
12.2
11.6
11.2
10.2
Qg (Typ.)
20 nC
FEATURES
• TrenchFET® Power MOSFET
• Industry First 1.5 V Rated MOSFET
• Ultra Small MICRO FOOT® Chipscale
RoHS
COMPLIANT
Packaging Reduces Footprint Area, Profile
(0.62 mm) and On-Resistance Per Footprint Area
APPLICATIONS
• Low Threshold Load Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
MICRO FOOT
Bump Side View
Backside View
3
D
2
D
8404
XXX
S
4
G
1
D
Device Marking: 8404
xxx = Date/Lot Traceability Code
G
Ordering Information: Si8404DB-T1-E1 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
8
Gate-Source Voltage
VGS
±5
TC = 25 °C
12.2
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
9.8
8.1b,c
TA = 70 °C
6.5b,c
Pulsed Drain Current
IDM 20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
5.2
2.3b,c
TC = 25 °C
6.25
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
4
2.78b,c
TA = 70 °C
1.78b,c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Package Reflow Conditionsd
IR/Convection
260
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump.
Unit
V
A
W
°C
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
www.vishay.com
1
1 page  
Si8404DB
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.050
0.045
ID = 1 A
100
Limited by RDS(on)*
10
P(t) = 100 ms
0.040
0.035
0.030
0.025
0.020
0
TA = 125 °C
TA = 25 °C
1234
VGS - Gate-to-Source Voltage (V)
RDS(on) vs VGS vs Temperature
5
P(t) = 1s
1 P(t) = 10s
DC
0.1
0.01
TA = 25 °C
Single Pulse
0.001
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
80 8
7
60
6
5
40 4
3
20 2
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1
0
0 25 50 75 100 125 150
Case Temperature (°C)
Power De-Rating
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
TF - Foot Temperature (°C)
Current De-Rating**
Document Number: 73518
S-82118-Rev. C, 08-Sep-08
** The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-foot thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si8404DB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si8404DB | N-Channel 1.5-V (G-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |