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PDF IXFX55N50 Data sheet ( Hoja de datos )
| Número de pieza | IXFX55N50 | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFX 50N50
IXFX 55N50
VDSS
ID25
500 V 50 A
500 V 55 A
t
rr
≤
250
ns
RDS(on)
100 mΩ
80 mΩ
Preliminary data sheet
Symbol
V
DSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
50N50
55N50
50N50
55N50
50N50
55N50
500 V
500 V
±20 V
±30 V
50 A
55 A
200 A
220 A
50 A
55 A
60 mJ
3J
5 V/ns
520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
V
DSS
V
GS(th)
IGSS
V = 0 V, I = 1mA
GS D
V = V , I = 8mA
DS GS D
VGS = ±20 V, VDS = 0
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.5 V
±200 nA
IDSS
RDS(on)
V DS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
TJ = 25°C
TJ = 125°C
50N50
55N50
25 µA
2 mA
100 m Ω
80 m Ω
PLUS 247TM
(IXFX)
G
D
D (TAB)
Features
l International standard package
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
l Temperature and lighting controls
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98507D (04/02)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFX55N50.PDF ] | |
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