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Номер произв P0903BTG
Описание N-Channel Enhancement Mode MOSFET
Производители UNIKC
логотип UNIKC логотип 



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P0903BTG Даташит, Описание, Даташиты
P0903BTG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID
64A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current 1
TC = 25 °C
TC = 100 °C
ID
IDM
64
40
150
Avalanche Current
IAS 35
Avalanche Energy
L = 0.1mH
EAS
64
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62.5
25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 58A.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNIT
2 °CS/ W
Ver 1.0
1 2012/4/16









No Preview Available !

P0903BTG Даташит, Описание, Даташиты
P0903BTG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
25
1.0 1.8 3.0
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TC = 125 °C
VDS = 5V, VGS = 10V
150
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
9.3 19
7.3 9.5
53
DYNAMIC
Input Capacitance
Ciss
1350
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
263
Reverse Transfer Capacitance
Crss
141
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg VGS = 10V
VGS = 5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 15V, ID @ 1A,
VGS = 10V, RGS = 6Ω
25
14
6
7
16
25
60
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
150
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
32
21
2Independent of operating temperature.
3Package limitation current is 58A.
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16









No Preview Available !

P0903BTG Даташит, Описание, Даташиты
P0903BTG
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16










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