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даташит G4BC30FD PDF ( Datasheet )

G4BC30FD Datasheet Download - International Rectifier

Номер произв G4BC30FD
Описание IRG4BC30FD
Производители International Rectifier
логотип International Rectifier логотип 
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G4BC30FD Даташит, Описание, Даташиты
PD -91451B
IRG4BC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
E
n-channel
bridge configurations
• Industry standard TO-220AB package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Fast CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
31
17
120
120
12
120
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RqJC
RqJC
RqCS
RqJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
°C/W
g (oz)
1
12/8/98

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G4BC30FD Даташит, Описание, Даташиты
IRG4BC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance „ 6.1
ICES
Zero Gate Voltage Collector Current
----
----
VFM Diode Forward Voltage Drop
----
----
IGES Gate-to-Emitter Leakage Current ----
---- ---- V
0.69 ---- V/°C
1.59 1.8
1.99 ---- V
1.70 ----
---- 6.0
-11 ---- mV/°C
10 ---- S
---- 250 µA
---- 2500
1.4 1.7 V
1.3 1.6
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 17A
VGE = 15V
IC = 31A
See Fig. 2, 5
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
---- 51 77
---- 7.9 12
---- 19 28
---- 42 ----
---- 26 ----
---- 230 350
---- 160 230
---- 0.63 ----
---- 1.39 ----
---- 2.02 3.9
---- 42 ----
---- 27 ----
---- 310 ----
---- 310 ----
---- 3.2 ----
---- 7.5 ----
---- 1100 ----
---- 74 ----
---- 14 ----
---- 42 60
---- 80 120
---- 3.5 6.0
---- 5.6 10
---- 80 180
---- 220 600
---- 180 ----
---- 120 ----
IC = 17A
nC VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
ns IC = 17A, VCC = 480V
VGE = 15V, RG = 23W
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
ns
mJ
nH
pF
ns
A
nC
A/µs
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 17A, VCC = 480V
VGE = 15V, RG = 23W
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 12A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C 16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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G4BC30FD Даташит, Описание, Даташиты
20
16
12
60% of rated
vo lt age
8
I
4
0
0.1
IRG4BC30FD
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
Turn-on losses include
effec ts of rev ers e rec overy
Power D issipation = 21W
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
TJ = 25°C
100
TJ = 150°C
10
V GE = 15V
1 20µs PULSE WIDTH A
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
1 5µs PULSE WIDTH A
5 6 7 8 9 10 11 12 13
VG E , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3






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