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Si1067X PDF даташит

Спецификация Si1067X изготовлена ​​​​«Vishay» и имеет функцию, называемую «P-Channel 20 V (D-S) MOSFET».

Детали детали

Номер произв Si1067X
Описание P-Channel 20 V (D-S) MOSFET
Производители Vishay
логотип Vishay логотип 

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Si1067X Даташит, Описание, Даташиты
P-Channel 20 V (D-S) MOSFET
Si1067X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
0.150 at VGS = - 4.5 V
0.166 at VGS = - 2.5V
0.214 at VGS = - 1.8V
ID (A)
1.06
1.0
0.49
Qg (Typ.)
6.0
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
X XX
Lot Traceability
and Date Code
Part # Code
S
G
Top View
Ordering Information: Si1067X-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 20
±8
- 1.06b, c
- 0.85b, c
-8
- 0.2b, c
0.236b, c
0.151b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
t 5 s
Steady State
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Symbol
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
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Si1067X Даташит, Описание, Даташиты
Si1067X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.06 A
VGS = - 2.5 V, ID = - 1.0 A
VGS = - 1.8 V, ID = - 0.49 A
VDS = - 10 V, ID = - 1.06 A
Ciss
Coss
Crss
Qg
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 5 V, ID = - 1.06 A
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 1.06 A
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rg
td(on)
f = 1 MHz
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 19.74
ID - 0.76 A, VGEN = - 4.5 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
Body Diode Reverse Recovery Time
VSD
trr
IS = - 0.63 A
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 0.7 A, dI/dt = 100 A/µs
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.45
-8
Typ.
- 32.07
3.02
0.125
0.138
0.165
4.0
375
82
62
6.5
6.0
0.76
2.23
8.8
14
22
48
17
0.8
12.8
4.5
7.3
5.5
Max.
- 0.95
± 100
-1
- 10
0.150
0.166
0.214
9.3
9.1
13.2
21
33
72
25.5
8
1.2
19.2
6.8
Unit
V
mV/°C
V
nA
µA
A
S
pF
nC
ns
A
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 74322
S10-2542-Rev. D, 08-Nov-10









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Si1067X Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8
VGS = 5 V thru 2.5 V
2.0
6
VGS = 2 V
1.5
4 1.0
Si1067X
Vishay Siliconix
TC = 25 °C
2
0
0.0
0.3
VGS = 1.5 V
VGS = 1.0 V
1.0 2.0 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4.0
TC = 125 °C
0.5
TC = - 55 °C
0.0
0.0 0.4 0.8 1.2 1.6 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics Curves vs. Temperature
800
0.24
0.18
VGS = 1.8 V
0.12
0.06
VGS = 2.5 V
VGS = 4.5 V
0
0246
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
ID = 1.06 A
4
VDS = 10 V
3
8
2
VDS = 16 V
1
600
400 Ciss
200
Crss
0
04
Coss
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.4
VGS = 4.5 V, ID = 1.06 A
VGS = 2.5 V, ID = 1.0 A
1.2
20
1.0
VGS = 1.8 V, ID = 0.89 A
0.8
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74322
S10-2542-Rev. D, 08-Nov-10
www.vishay.com
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