BC857 PDF даташит
Спецификация BC857 изготовлена «RECTRON» и имеет функцию, называемую «PNP Silicon Planar Epitaxial Transistors». |
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Детали детали
Номер произв | BC857 |
Описание | PNP Silicon Planar Epitaxial Transistors |
Производители | RECTRON |
логотип |
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PNP Silicon Planar Epitaxial Transistors
BC856
BC857
BC858
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (+VBE = 1V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
Tamb = 60 oC
Storge Temperature
Junction Temperature
SYMBOL
VCBO
VCEX
VCEO
VEBO
IC
ICM
IEM
IBM
Ptot**
Tstg
Tj
BC856
80
80
65
Thermal Resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
Rth(j-t)
Rth(t-s)
Rth(s-a)**
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
BC857
50
50
45
5
100
200
200
200
250
-55 to +150
150
60
280
90
BC858
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mW
oC
oC
K/W
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BC856
BC857
BC858
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
DESCRIPTION
Collector Cut Off Current
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Knee Voltage
DC Current Gain
SYMBOL TEST CONDITION
ICBO
VCB = 30V, IE = 0
VCB = 30V, IE = 0, Tj = 150oC
VBE(on)*
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
VCE(Sat)
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VBE(Sat)***
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VCEK
IC = 10mA, -IB = Value for which
IC = 11mA at -VCE = 1V
IC = 2mA, VCE = 5V
BC856
hFE BC857/BC858
BC856A/BC857A/BC858A
Collector Capacitance
Transition Frequency
Small Signal Current Gain
Noise Figure
CC
fT
| hfe |
NF
BC856B/BC857B/BC858B
BC857C/BC858C
IE = ie = 0, VCB = 10V, f = 1MHZ
IC = 10mA, VCB = 5V, f = 100MHZ
IC = 2mA, VCE = 5V, f= 1kHZ
BC856
BC857/BC858
IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
MIN TYP MAX
15
4
0.6 0.75
0.82
0.30
0.65
0.7
0.85
0.60
UNITS
nA
uA
V
V
V
V
125 475
125 800
125 250
220 475
420 800
4.5
100
125 500
125 800
10
pF
MHZ
dB
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