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BC848 Datasheet Download - NXP

Номер произв BC848
Описание 100 mA NPN general-purpose transistors
Производители NXP
логотип NXP логотип 
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BC848 Даташит, Описание, Даташиты
BC848 series
30 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
BC848B
SOT23
BC848W
SOT323
JEITA
-
SC-70
JEDEC
TO-236AB
-
PNP
complement
BC858B
BC858W
1.2 Features
„ General-purpose transistors
„ SMD plastic packages
1.3 Applications
„ General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
BC848B
BC848W
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 30 V
- - 100 mA
200 290 450
110 -
800

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BC848 Даташит, Описание, Даташиты
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Symbol
3
12
006aaa144
3
1
2
sym021
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description
BC848B - plastic surface mounted package; 3 leads
BC848W
SC-70 plastic surface mounted package; 3 leads
4. Marking
Table 5. Marking codes
Type number
BC848B
BC848W
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking code[1]
1K*
1M*
Version
SOT23
SOT323
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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BC848 Даташит, Описание, Даташиты
NXP Semiconductors
BC848 series
30 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
SOT23
open emitter
open base
open collector
single pulse;
tp 1 ms
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1]
-
SOT323
-
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max Unit
30 V
30 V
5V
100 mA
200 mA
200 mA
250
200
150
+150
+150
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT23
SOT323
Conditions
in free air
Min
[1]
-
-
Typ Max
- 500
- 625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
BC848_SER_7
Product data sheet
Rev. 07 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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