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BC847BS Datasheet Download - Philips

Номер произв BC847BS
Описание NPN general purpose double transistor
Производители Philips
логотип Philips логотип 

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BC847BS Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BC847BS
NPN general purpose double
transistor
Product specification
Supersedes the data of 1997 Jul 14
1999 Apr 28







No Preview Available !

BC847BS Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose double transistor
Product specification
BC847BS
FEATURES
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN double transistor in an SC-88 plastic package.
PNP complement: BC857BS.
MARKING
TYPE NUMBER
BC847BS
MARKING CODE
1Ft
handbook, halfpage
65
4
12
Top view
3
65 4
TR2
TR1
123
MAM340
Fig.1 Simplified outline (SC-88) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per transistor
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Per device
Ptot total power dissipation
open emitter
open base
open collector
Tamb 25 °C
Tamb 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
50 V
45 V
5V
100 mA
200 mA
200 mA
200 mW
65 +150 °C
150 °C
65 +150 °C
300 mW
1999 Apr 28
2







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BC847BS Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose double transistor
Product specification
BC847BS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per device
Rth j-a
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector cut-off current
IEBO
hFE
VCEsat
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
VBEsat
VBE
Cc
Ce
fT
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 30 V
− − 15 nA
IE = 0; VCB = 30 V; Tj = 150 °C
− − 5 µA
IC = 0; VEB = 5 V
− − 100 nA
IC = 2 mA; VCE = 5 V
200
450
IC = 10 mA; IB = 0.5 mA
− − 100 mV
IC = 100 mA; IB = 5 mA; note 1
− − 300 mV
IC = 10 mA; IB = 0.5 mA
755 mV
IC = 2 mA; VCE = 5 V
580 655 700 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz − − 1.5 pF
IC = ic = 0; VEB = 500 mV; f = 1 MHz
11
pF
IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz
1999 Apr 28
3










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