BC847T PDF даташит
Спецификация BC847T изготовлена «Philips» и имеет функцию, называемую «NPN general purpose transistors». |
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Детали детали
Номер произв | BC847T |
Описание | NPN general purpose transistors |
Производители | Philips |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC846T; BC847T
NPN general purpose transistors
Preliminary specification
Supersedes data of 1997 Jul 07
1999 Apr 26
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistors
Preliminary specification
BC846T; BC847T
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification, especially
in portable communication equipment
• Electronic data processing (EDP) and consumer
applications.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complements: BC856T and BC857T.
MARKING
TYPE
NUMBER
BC846AT
BC846BT
BC847AT
MARKING
CODE
1A
1B
1E
TYPE
NUMBER
BC847BT
BC847CT
MARKING
CODE
1F
1G
handbook, halfpage
3
1
Top view
2
3
1
2
MAM348
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC846AT; BC846BT
BC847AT; BC847BT; BC847CT
collector-emitter voltage
BC846AT; BC846BT
BC847AT; BC847BT; BC847CT
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
− 80 V
− 50 V
− 65 V
− 45 V
−5V
− 100 mA
− 200 mA
− 100 mA
− 150 mW
−65 +150 °C
− 150 °C
−65 +150 °C
1999 Apr 26
2
No Preview Available ! |
Philips Semiconductors
NPN general purpose transistors
Preliminary specification
BC846T; BC847T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBE
emitter cut-off current
DC current gain
BC846AT; BC847AT
BC846BT; BC847BT
BC847CT
collector-emitter saturation
voltage
base-emitter voltage
Cc collector capacitance
Ce emitter capacitance
fT transition frequency
F noise figure
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 5 V
−
−
−
110
200
420
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
580
−
−
−
100
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
11
−
−
MAX. UNIT
15 nA
5 µA
100 nA
220
450
800
200 mV
400 mV
700 mV
770 mV
1.5 pF
− pF
− MHz
10 dB
1999 Apr 26
3
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