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BC847T PDF даташит

Спецификация BC847T изготовлена ​​​​«Philips» и имеет функцию, называемую «NPN general purpose transistors».

Детали детали

Номер произв BC847T
Описание NPN general purpose transistors
Производители Philips
логотип Philips логотип 

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BC847T Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BC846T; BC847T
NPN general purpose transistors
Preliminary specification
Supersedes data of 1997 Jul 07
1999 Apr 26









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BC847T Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistors
Preliminary specification
BC846T; BC847T
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification, especially
in portable communication equipment
Electronic data processing (EDP) and consumer
applications.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complements: BC856T and BC857T.
MARKING
TYPE
NUMBER
BC846AT
BC846BT
BC847AT
MARKING
CODE
1A
1B
1E
TYPE
NUMBER
BC847BT
BC847CT
MARKING
CODE
1F
1G
handbook, halfpage
3
1
Top view
2
3
1
2
MAM348
Fig.1 Simplified outline (SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BC846AT; BC846BT
BC847AT; BC847BT; BC847CT
collector-emitter voltage
BC846AT; BC846BT
BC847AT; BC847BT; BC847CT
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
80 V
50 V
65 V
45 V
5V
100 mA
200 mA
100 mA
150 mW
65 +150 °C
150 °C
65 +150 °C
1999 Apr 26
2









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BC847T Даташит, Описание, Даташиты
Philips Semiconductors
NPN general purpose transistors
Preliminary specification
BC846T; BC847T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBE
emitter cut-off current
DC current gain
BC846AT; BC847AT
BC846BT; BC847BT
BC847CT
collector-emitter saturation
voltage
base-emitter voltage
Cc collector capacitance
Ce emitter capacitance
fT transition frequency
F noise figure
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 5 V
110
200
420
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 k;
f = 1 kHz; B = 200 Hz
580
100
TYP.
11
MAX. UNIT
15 nA
5 µA
100 nA
220
450
800
200 mV
400 mV
700 mV
770 mV
1.5 pF
pF
MHz
10 dB
1999 Apr 26
3










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