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PDF 1S1832 Data sheet ( Hoja de datos )
| Número de pieza | 1S1832 | |
| Descripción | Silicon Diffused Type Rectifier | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Rectifier Silicon Diffused Type
1S1832
High-Speed Rectifier Applications (fast recovery)
• Average Forward Current: IF (AV) = 0.7 A (Ta = 50°C)
• Repetitive Peak Reverse Voltage: VRRM = 1800 V
• Reverse Recovery Time: trr = 6.0 µs
• Plastic Mold Type
1S1832
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak reverse voltage
Reverse voltage (DC)
Average forward current (Ta = 50°C)
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
VR
IF (AV)
IFSM
Tj
Tstg
Rating
1800
1500
0.7
60 (50 Hz)
66 (60 Hz)
−40 to 125
−40 to 125
Electrical Characteristics (Ta = 25°C)
Unit
V
V
A
A
°C
°C
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
VFM
IRRM (1)
IRRM (2)
trr
IFM = 1.5 A
VRRM = 1500 V
VRRM = 1500 V, Tj = 125°C
IF = 20 mA, IR = 1 mA
⎯ ⎯ 2.0 V
⎯ ⎯ 10
µA
⎯ ⎯ 400
⎯ ⎯ 6.0 µs
Note 1: Lead diameter not controlled in this zone to allow for flash, lead finish build-up and minor irregularities other
than slugs.
Note 2: Soldering: 5 mm is the minimum to be kept between the case and the soldered part.
Note 3: Lead bending: 5 mm is the minimum to be kept from the case when bending lead wires.
Marking
Part No. (or abbreviation code)
Lot No.
32 A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
32
Part No.
1S1832
1 2004-07-07
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1S1832.PDF ] | |
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