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1PS70SB82 PDF даташит

Спецификация 1PS70SB82 изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «Schottky barrier double diodes».

Детали детали

Номер произв 1PS70SB82
Описание Schottky barrier double diodes
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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1PS70SB82 Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
Product specification
2001 Jan 18









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1PS70SB82 Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
FEATURES
Low forward voltage
Very small SMD plastic package
Low diode capacitance.
APPLICATIONS
UHF mixers
Sampling circuits
Modulators
Phase detectors.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 (SC-70)
very small plastic SMD package.
Single diodes and double diodes with
different pinning are available. ESD
sensitive device, observe handling
precautions.
MARKING
TYPE NUMBER
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
MARKING
CODE
88
87
85
86
PINNING
PIN SYMBOL
1PS70SB82
1a
2 n.c.
3k
1PS70SB84
1 a1
2 k2
3 k1 and a2
1PS70SB85
1 a1
2 a2
3 k1 and k2
1PS70SB86
1 k1
2 k2
3 a1 and a2
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 Simplified outline
(SOT323; SC-70) and
pin configuration.
3
12
n.c.
MLC357
Fig.2 1PS70SB82 single
diode configuration
(symbol).
3
12
MLC358
Fig.3 1PS70SB84 diode
configuration (symbol).
3
12
MLC359
Fig.4 1PS70SB85 diode
configuration (symbol).
3
12
MLC360
Fig.5 1PS70SB86 diode
configuration (symbol).
2001 Jan 18
2









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1PS70SB82 Даташит, Описание, Даташиты
Philips Semiconductors
Schottky barrier (double) diodes
Product specification
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
VR continuous reverse voltage
IF continuous forward current
Tstg storage temperature
Tj junction temperature
MIN.
MAX.
UNIT
15 V
30 mA
65
+150
°C
125 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
VALUE
625
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
rD differential diode forward resistance
IR continuous reverse current
Cd diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
TYP.
see Fig.6
IF = 1 mA
IF = 30 mA
f = 1 MHz; IF = 5 mA; see Fig.9
VR = 1 V; note 1; see Fig.7
VR = 0; f = 1 MHz; see Fig.8
12
1
MAX.
UNIT
340 mV
700 mV
−Ω
0.2 µA
pF
2001 Jan 18
3










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Номер в каталогеОписаниеПроизводители
1PS70SB82Schottky barrier double diodesNXP Semiconductors
NXP Semiconductors
1PS70SB84Schottky barrier double diodesNXP Semiconductors
NXP Semiconductors
1PS70SB85Schottky barrier double diodesNXP Semiconductors
NXP Semiconductors
1PS70SB86Schottky barrier double diodesNXP Semiconductors
NXP Semiconductors

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