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Datasheet MTE1S0312MC Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MTE1S0312MC | Isolated 1W Single Output SM DC/DC Converters www.murata-ps.com
SELECTION GUIDE
MTE1 Series
Isolated 1W Single Output SM DC/DC Converters
Nominal Input Voltage
Output Voltage Output Current Input Current at Rated Load (Typ.) Load Regulation
(Typ. ) Load Regulation
(Max) Output Ripple & Noise (Typ.) Efficiency (Min.) Efficiency (Typ.)
Isolatio |  Murata | converter |
MTE Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MTE010N10E3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C944E3 Issued Date : 2013.11.12 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTE010N10E3 BVDSS ID
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
100V 70A 9.6mΩ 10.1mΩ
Features
• Low Gate Charge • Simple Drive Requirem  Cystech Electonics mosfet | | |
| 2 | MTE010N10F3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C944F3 Issued Date : 2014.06.09 Revised Date : 2015.09.04 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE010N10F3 BVDSS ID@ TC=25°C, VGS=10V (silicon limit)
RDSON(TYP) @ VGS=10V, ID=50A
RDSON(TYP) @ VGS=7V, ID=20A
Features
• Low Gate Charge • S Cystech Electonics mosfet | | |
| 3 | MTE010N10FP | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C944FP Issued Date : 2014.01.14 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE010N10FP BVDSS ID @ VGS=10V
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V 35A 9.9mΩ 10.5mΩ
Features
• Low On Resistance • Simple D Cystech Electonics mosfet | | |
| 4 | MTE011N10RE3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RE3
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant Cystech Electonics mosfet | | |
| 5 | MTE011N10RFP | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE011N10RFP
BVDSS
Features
ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
Low On Resistance
RDS(ON)@VGS=10V, ID=11A
Simple Drive Require Cystech Electonics mosfet | | |
| 6 | MTE011N10RH8 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTE011N10RH8 BVDSS
100V
ID@VGS=10V, TC=25°C
45A
ID@VGS=10V, TA=25°C
15A
RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ
Features
• Single Drive Requirement � Cystech Electonics mosfet | | |
| 7 | MTE011N10RJ3 | N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE011N10RJ3
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead p Cystech Electonics mosfet | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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