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13NB60 Datasheet Download - STMicroelectronics

Номер произв 13NB60
Описание STW13NB60
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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13NB60 Даташит, Описание, Даташиты
STW13NB60
® STH13NB60FI
N - CHANNEL 600V - 0.48- 13A - TO-247/ISOWATT218
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST W13 NB6 0
600 V <0.54
13 A
www.DataSheet4U.cSoTmH13 NB 6 0F I
600 V
<0.54
8.6 A
s TYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
Un it
STW13NB60 STH13NB60FP
600 V
600 V
± 30
V
13 8.6 A
8.2 5.4 A
52 52 A
190
1.52
80
0.64
W
W /o C
4 4 V/ns
2000
-65 to 150
150
( 1) ISD 13 A, di/dt 200 Α/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
January 2000
1/9







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13NB60 Даташит, Описание, Даташиты
STW13NB60 STH13NB60FI
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.66
ISOW AT T218
1.56
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
www.DataSheet4U.coSmymbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
13
700
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 6.5 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
T yp.
4
Max.
5
Unit
V
0.48 0.54
13 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 6.5 A
Min.
8
T yp.
12
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2600
325
30
pF
pF
pF
2/9







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13NB60 Даташит, Описание, Даташиты
STW13NB60 STH13NB60FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on delay Time
Rise Time
Test Conditions
VDD = 300 V ID = 2.5 A
RG = 4.7
VGS = 10 V
Min.
T yp.
27
13
Max.
Unit
ns
ns
Qg Tot al Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
www.DataSheet4U.com
SWITCHING OFF
VDD = 480 V ID = 13 A VGS = 10 V
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480V ID = 13 A
RG = 4.7 VGS = 10 V
58
15.5
23
82
Min.
T yp.
15
15
25
Max.
nC
nC
nC
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD =13 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 13 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
T yp.
Max.
13
52
Unit
A
A
1.6
630
6.8
22
V
ns
µC
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/9










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